Patents by Inventor Claus Waechter
Claus Waechter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197577Abstract: A semiconductor device includes a premolded leadframe, including a main surface, at least one electrical contact extending out of the main surface, and an opposite main surface arranged opposite to the main surface. The semiconductor device further includes a semiconductor package arranged on the main surface and laterally displaced to the at least one electrical contact of the premolded leadframe. The semiconductor package includes a semiconductor chip and at least one electrical contact. Surfaces of the at least one electrical contact of the premolded leadframe and the at least one electrical contact of the semiconductor package facing away from the main surface are flush.Type: ApplicationFiled: December 15, 2022Publication date: June 22, 2023Inventors: Thorsten Scharf, Josef Höglauer, Angela Kessler, Claus Waechter
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Patent number: 11505450Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: GrantFiled: October 21, 2020Date of Patent: November 22, 2022Assignee: Infineon Technologies AGInventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
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Publication number: 20220148951Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.Type: ApplicationFiled: December 7, 2021Publication date: May 12, 2022Applicant: Infineon Technologies AGInventors: Ngoc-Hoa Huynh, Franz-Xaver Muehlbauer, Claus Waechter, Veronika Theyerl, Dominic Maier, Thomas Kilger, Saverio Trotta, Ashutosh Baheti, Georg Meyer-Berg, Maciej Wojnowski
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Patent number: 11251146Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.Type: GrantFiled: April 6, 2020Date of Patent: February 15, 2022Assignee: Infineon Technologies AGInventors: Walter Hartner, Francesca Arcioni, Birgit Hebler, Martin Richard Niessner, Claus Waechter, Maciej Wojnowski
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Patent number: 11195787Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.Type: GrantFiled: February 17, 2016Date of Patent: December 7, 2021Assignee: Infineon Technologies AGInventors: Ngoc-Hoa Huynh, Franz-Xaver Muehlbauer, Claus Waechter, Veronika Huber, Dominic Maier, Thomas Kilger, Saverio Trotta, Ashutosh Baheti, Georg Meyer-Berg, Maciej Wojnowski
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Patent number: 11145563Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.Type: GrantFiled: June 20, 2019Date of Patent: October 12, 2021Assignee: Infineon Technologies AGInventors: Christian Geissler, Walter Hartner, Claus Waechter, Maciej Wojnowski
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Patent number: 11040872Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.Type: GrantFiled: October 8, 2019Date of Patent: June 22, 2021Assignee: Infineon Technologies AGInventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
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Publication number: 20210032097Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: ApplicationFiled: October 21, 2020Publication date: February 4, 2021Applicant: Infineon Technologies AGInventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
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Patent number: 10899604Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: GrantFiled: April 18, 2019Date of Patent: January 26, 2021Inventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
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Publication number: 20200331748Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.Type: ApplicationFiled: April 18, 2019Publication date: October 22, 2020Applicant: Infineon Technologies AGInventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
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Publication number: 20200321295Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.Type: ApplicationFiled: April 6, 2020Publication date: October 8, 2020Inventors: Walter HARTNER, Francesca ARCIONI, Birgit HEBLER, Martin Richard NIESSNER, Claus WAECHTER, Maciej WOJNOWSKI
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Publication number: 20200039820Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.Type: ApplicationFiled: October 8, 2019Publication date: February 6, 2020Applicant: Infineon Technologies AGInventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
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Patent number: 10549985Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.Type: GrantFiled: August 31, 2017Date of Patent: February 4, 2020Assignee: Infineon Technologies AGInventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter
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Publication number: 20200006174Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.Type: ApplicationFiled: June 20, 2019Publication date: January 2, 2020Inventors: Christian GEISSLER, Walter Hartner, Claus Waechter, Maciej Wojnowski
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Patent number: 10435292Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.Type: GrantFiled: July 17, 2017Date of Patent: October 8, 2019Assignee: Infineon Technologies AGInventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
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Publication number: 20190198455Abstract: A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.Type: ApplicationFiled: December 20, 2018Publication date: June 27, 2019Inventors: Walter HARTNER, Christian GEISSLER, Thomas KILGER, Johannes LODERMEYER, Franz-Xaver MUEHLBAUER, Martin Richard NIESSNER, Claus WAECHTER
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Publication number: 20180148322Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.Type: ApplicationFiled: August 31, 2017Publication date: May 31, 2018Inventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter
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Publication number: 20180022601Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.Type: ApplicationFiled: July 17, 2017Publication date: January 25, 2018Applicant: Infineon Technologies AGInventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
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Publication number: 20170236776Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.Type: ApplicationFiled: February 17, 2016Publication date: August 17, 2017Applicant: Infineon Technologies AGInventors: Ngoc-Hoa Huynh, Franz-Xaver Muehlbauer, Claus Waechter, Veronika Huber, Dominic Maier, Thomas Kilger, Saverio Trotta, Ashutosh Baheti, Georg Meyer-Berg, Maciej Wojnowski