Patents by Inventor Claus Waechter

Claus Waechter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210032097
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Application
    Filed: October 21, 2020
    Publication date: February 4, 2021
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
  • Patent number: 10899604
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: January 26, 2021
    Inventors: Florian Brandl, Christian Geissler, Robert Gruenberger, Claus Waechter, Bernhard Winkler
  • Publication number: 20200331748
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Applicant: Infineon Technologies AG
    Inventors: Florian BRANDL, Christian GEISSLER, Robert GRUENBERGER, Claus WAECHTER, Bernhard WINKLER
  • Publication number: 20200321295
    Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.
    Type: Application
    Filed: April 6, 2020
    Publication date: October 8, 2020
    Inventors: Walter HARTNER, Francesca ARCIONI, Birgit HEBLER, Martin Richard NIESSNER, Claus WAECHTER, Maciej WOJNOWSKI
  • Publication number: 20200039820
    Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Applicant: Infineon Technologies AG
    Inventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
  • Patent number: 10549985
    Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: February 4, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter
  • Publication number: 20200006174
    Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.
    Type: Application
    Filed: June 20, 2019
    Publication date: January 2, 2020
    Inventors: Christian GEISSLER, Walter Hartner, Claus Waechter, Maciej Wojnowski
  • Patent number: 10435292
    Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: October 8, 2019
    Assignee: Infineon Technologies AG
    Inventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
  • Publication number: 20190198455
    Abstract: A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 27, 2019
    Inventors: Walter HARTNER, Christian GEISSLER, Thomas KILGER, Johannes LODERMEYER, Franz-Xaver MUEHLBAUER, Martin Richard NIESSNER, Claus WAECHTER
  • Publication number: 20180148322
    Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
    Type: Application
    Filed: August 31, 2017
    Publication date: May 31, 2018
    Inventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter
  • Publication number: 20180022601
    Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.
    Type: Application
    Filed: July 17, 2017
    Publication date: January 25, 2018
    Applicant: Infineon Technologies AG
    Inventors: Claus Waechter, Edward Fuergut, Bernd Goller, Michael Ledutke, Dominic Maier
  • Publication number: 20170236776
    Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.
    Type: Application
    Filed: February 17, 2016
    Publication date: August 17, 2017
    Applicant: Infineon Technologies AG
    Inventors: Ngoc-Hoa Huynh, Franz-Xaver Muehlbauer, Claus Waechter, Veronika Huber, Dominic Maier, Thomas Kilger, Saverio Trotta, Ashutosh Baheti, Georg Meyer-Berg, Maciej Wojnowski