Abstract: A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized in that, for the purpose of pressure-dependent brightness of the light radiation, the composition of the light-active zone at the pn junction comprises a semiconductor material which has a composition which corresponds to a position close to the transition from a direct energy gap to an indirect energy gap and at which a change of the composition would result in a significant change in the brightness of the emission. The invention is particularly useful for potential-free measurement of pressure forces.

Abstract: A luminescent diode is comprised of n- and p-conductive layer components in which a graded bandgap is present and between which a pn-junction is present. The p-conductive layer component is produced by means of an additional zinc additive during an epitaxy processing utilized for manufacturing the device. The luminescent diode of the invention has improved efficiency and a higher modulation capability cutoff frequency.

Abstract: A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.

Abstract: A solar cell has a semiconductor body with a radiation-receiving surface having a ribbed structure and having a small pn-junction in the semiconductor body which is matched to follow the contour of the surface of the ribbed structure, and the interstices between adjacent ribs are filled with a material which is highly permeable to the solar radiation and which contains particles for scattering the solar radiation to a high degree situated therein.

Abstract: A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.

Abstract: A method of producing an electrical contact, with a low contact resistance, on a semiconductor bodies, particularly for luminescence diodes of semiconductor material, and which is also suitable for securing such a semiconductor body on an electrically conductive body acting as a heat sink, in which small metal contacts arranged in the form of a raster pattern are alloyed at an increased temperature, on the surface of the semiconductor body to be contacted, with the sum of the surface areas of all the metal contacts being small in relation to the surface area of the semiconductor body, and thereafter securing the surface of the semiconductor body, provided with such metal contacts, to a metal heat sink by an electrically and thermally conductive adhesive layer.

Abstract: Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into the melt as dopants, a first layer is grown on the substrate from the melt, and then a zinc containing layer is deposited over the first layer, and the temperatures of the layers are controlled to cause diffusion of the zinc into the first layer to a predetermined depth.