Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: Laser lift-off methods are described in which optical flatness is provided on the back side of a temporary substrate using either an optical layer or optical liquid. A laser is directed through the optical layer or optical liquid and a back side of the temporary substrate to decompose a portion of a process layer supported on a front side of the temporary substrate, followed by separation of the process layer and the temporary substrate.

Abstract: A method and structure for forming an array of LED devices is disclosed. The LED devices in accordance with embodiments of the invention may include a confined current injection area in which a current spreading layer protrudes away from a cladding layer in a pillar configuration so that the cladding layer is wider than the current spreading layer pillar.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: LEDs and an electronic device are disclosed. In an embodiment an LED includes a p-n diode and a dielectric mirror spanning along a lateral sidewall of the p-n diode and directly underneath the p-n diode. An opening is formed in the dielectric mirror directly underneath the p-n diode, and a bottom conductive contact is on the dielectric mirror directly underneath the p-n diode and within the opening in the dielectric mirror.

Abstract: A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. Patterned sacrificial spacers are formed between the stabilization posts and between the micro devices. The patterned sacrificial spacers are disposed upon the patterned sacrificial spacers.

Abstract: Illumination devices and methods of making same are disclosed. In one embodiment, a display device includes a light modulating array and a light guide configured to receive light into at least one edge of the light guide. The light guide can be characterized by a first refractive index. The display device can also include a light turning layer disposed such that the light guide is at least partially between the turning layer and the array. The turning layer can comprise an inorganic material characterized by a second refractive index that is substantially the same as the first refractive index.

Abstract: A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. The stabilization layer is bonded to a spacer side of a carrier substrate. The spacer side of the carrier substrate includes raised spacers extending from a spacer-side surface of the carrier substrate.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: A method and structure for forming an array of LED devices is disclosed. The LED devices in accordance with embodiments of the invention may include a confined current injection area in which a current spreading layer protrudes away from a cladding layer in a pillar configuration so that the cladding layer is wider than the current spreading layer pillar.

Abstract: A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. Patterned sacrificial spacers are formed between the stabilization posts and between the micro devices. The patterned sacrificial spacers are disposed upon the patterned sacrificial spacers.

Abstract: Illumination devices and methods of making same are disclosed. In one embodiment, an illumination apparatus includes a light source, a light guide having a planar first surface, a first end and a second end, and a length therebetween, the light guide positioned to receive light from the light source into the light guide first end, and the light guide configured such that light from the light source provided into the first end of the light guide propagates towards the second end, and a plurality of light turning features that are configured to reflect light propagating towards the second end of the light guide out of the planar first surface of the light guide, each light turning feature having a turning surface and an interferometric stack formed on the turning surface.

Abstract: A method and structure for forming an array of micro devices is disclosed. An array of micro devices is formed over an array of stabilization posts included in a stabilization layer. The stabilization layer is bonded to a spacer side of a carrier substrate. The spacer side of the carrier substrate includes raised spacers extending from a spacer-side surface of the carrier substrate.

Abstract: Methods and devices are provided for selectively allowing light to pass through a substantially transparent substrate or blocking the light, at least to some degree. Some embodiments provide a plurality of reflective vanes that can be positioned in at least two positions. According to some such implementations, when the vanes are in an open position, incident light is allowed to pass through the window. The light may reflect from two or more vanes before passing through the window. When a sufficient voltage is applied between vane electrodes and other electrodes, the vanes are pulled down, reflecting back at least some of the incident light. The voltage may be controlled according to detected temperature, ambient light intensity, etc.

Abstract: Methods and devices are provided for selectively allowing light to pass through a substantially transparent substrate or blocking the light, at least to some degree. Some embodiments provide a plurality of reflective vanes that can be positioned in at least two positions. According to some such implementations, when the vanes are in an open position, incident light is allowed to pass through the window. The light may reflect from two or more vanes before passing through the window. When a sufficient voltage is applied between vane electrodes and other electrodes, the vanes are pulled down, reflecting back at least some of the incident light. The voltage may be controlled according to detected temperature, ambient light intensity, etc.

Abstract: Illumination devices and methods of making same are disclosed. In one embodiment, an illumination apparatus includes a light source, a light guide having a planar first surface, a first end and a second end, and a length therebetween, the light guide positioned to receive light from the light source into the light guide first end, and the light guide configured such that light from the light source provided into the first end of the light guide propagates towards the second end, and a plurality of light turning features that are configured to reflect light propagating towards the second end of the light guide out of the planar first surface of the light guide, each light turning feature having a turning surface and an interferometric stack formed on the turning surface.