Patents by Inventor Clayton W. Bates, Jr.

Clayton W. Bates, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8154028
    Abstract: An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 ?m to 10 ?m thick, and preferably about 3 ?m thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: April 10, 2012
    Assignee: Howard University
    Inventor: Clayton W. Bates, Jr.
  • Publication number: 20110180807
    Abstract: An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 ?m to 10 ?m thick, and preferably about 3 ?m thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.
    Type: Application
    Filed: January 28, 2010
    Publication date: July 28, 2011
    Applicant: HOWARD UNIVERSITY
    Inventor: Clayton W. Bates, JR.
  • Patent number: 4816183
    Abstract: A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe.sub.2.
    Type: Grant
    Filed: August 21, 1986
    Date of Patent: March 28, 1989
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventor: Clayton W. Bates, Jr.