Abstract: A module, including at least one first component in the form of a semiconductor component including multiple stress measuring cells situated in a distributed manner for detecting stress measured values at different measuring positions of the semiconductor component, at least one second component which is mechanically coupled to the semiconductor component, and an evaluation unit, which is designed to ascertain at least one location-dependent stress distribution in the semiconductor component based on the stress measured values detected at one measuring point in time, and to ascertain a deformation state of the at least one second component at the measuring point in time on the basis of the at least one ascertained location-dependent stress distribution in the semiconductor component. A corresponding method for monitoring environmental influences on a module is also described.

Abstract: A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.

Abstract: A module, including at least one first component in the form of a semiconductor component including multiple stress measuring cells situated in a distributed manner for detecting stress measured values at different measuring positions of the semiconductor component, at least one second component which is mechanically coupled to the semiconductor component, and an evaluation unit, which is designed to ascertain at least one location-dependent stress distribution in the semiconductor component based on the stress measured values detected at one measuring point in time, and to ascertain a deformation state of the at least one second component at the measuring point in time on the basis of the at least one ascertained location-dependent stress distribution in the semiconductor component. A corresponding method for monitoring environmental influences on a module is also described.

Abstract: A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.

Abstract: A method for determining, measuring and/or monitoring properties of a sensor system. In the method, a controlled change of at least one system parameter of the sensor system takes place in such a way that prior to the controlled change, the system parameter includes a first value and assumes at least one further value as a result of the controlled change. At least one characteristic variable of the sensor system and/or a change of the at least one characteristic variable of the sensor system is/are determined for the at least one further value of the system parameter. The determination, measuring and/or monitoring of properties of the sensor system take place based the at least one further value of the system parameter and the at least one characteristic variable determined in the second step and/or the change of the at least one characteristic variable.

Abstract: A method for determining a detection sensitivity of a rotation rate sensor, the rotation rate sensor including an oscillatory system. A first quadrature signal of the oscillatory system is determined in a first step. A controlled change of a transfer function of the oscillatory system takes place in a second step. A second quadrature signal of the oscillatory system is determined in a third step. The detection sensitivity is determined in a fourth step on the basis of the first and second quadrature signal. A method is also described for determining a detection sensitivity of a rotation rate sensor, the rotation rate sensor including one first oscillatory system and one second oscillatory system.