Abstract: A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.

Abstract: A vertical ion trap include at least four RF electrodes on a substrate, the RF electrodes extending up from the substrate, a region between the electrodes forming the vertical ion trap, and at least two direct current electrodes adjacent the RF electrodes and the vertical ion trap. A horizontal ion traps includes a substrate, the substrate having a hole, at least one RF electrodes raised above the substrate and offset from each other across the hole, the RF electrodes, and at least one DC electrode corresponding to each RF electrode, the DC electrodes raised above the substrate. A method of forming an ion trap includes forming three-dimensional structures on a substrate in a curable polymer using two-photon polymerization direct laser writing, metalizing the three-dimensional structures to form RF electrodes, and forming direct current electrodes at least partially on the substrate.