Abstract: A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer including an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.

Abstract: A micro-fabricated device for controlling trapped ions includes a first substrate having a main surface. A structured first metal layer is disposed over the main surface of the first substrate. The structured first metal layer includes electrodes of at least one ion trapping zone configured to trap an ion in a space above the structured first metal layer. A dielectric element is fixedly attached to the first substrate. The dielectric element includes at least one short-pulse-laser direct written (SPLDW) waveguide configured to direct laser light towards an ion trapped in the at least one ion trapping zone.

Abstract: A device for trapping ions includes: a first substrate having an upper multi-layer electrode structure implemented at a top side of the first substrate; a second substrate disposed over the first substrate and having a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate. The one or more first level ion traps includes the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate. A method of controlling trapped ions in a device is also described.

Abstract: A device for controlling trapped ions includes a substrate. An electrode structure is mounted on the substrate. The electrode structure includes DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A temperature sensor is disposed at the substrate and configured to sense temperatures below 50K.

Abstract: A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.

Abstract: A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A pin insert is arranged in the housing frame. The pin insert includes a base plate and contact pins. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate. The housing cover, when assembled with the housing frame, exerts a compressive force on a front side of the substrate by which a rear side of the substrate is pressed onto the contact pins.

Abstract: A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

Abstract: A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.

Abstract: A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

Abstract: A device for controlling trapped ions includes a first substrate of a semiconductor and/or dielectric material. A first metal structure is disposed at a main side of the first substrate. The device further includes a second substrate of a semiconductor and/or dielectric material. A second metal structure is disposed at a main side of the second substrate opposite the main side of the first substrate. A spacer is disposed between and bonded to the first and second substrates. The spacer includes an electrical interconnect which electrically connects the first metal structure to the second metal structure. A bond between the spacer and the first substrate or the spacer and the second substrate is a bond formed by waferbonding. At least one ion trap is configured to trap ions in a space between the first and second substrates, the first and second metal structures including electrodes of the ion trap.

Abstract: A device for controlling trapped ions includes an ion trap, a plurality of field electrodes configured to control ions in the ion trap, and a controller chip. The controller chip includes at least one delta-sigma digital to analog converter (DS-DAC) module including a DS-DAC circuit configured to receive a digital data stream, convert the digital data stream to analog control voltages, and supply the analog control voltages to the field electrodes.

Abstract: A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.

Abstract: A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer including an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.

Abstract: In a method of generating a microelectromechanical system, MEMS, device, a MEMS substrate including a movable element is provided. A glass cover member including a glass cover is formed by hot embossing. The glass cover member is bonded to the MEMS substrate so as to hermetically seal by the glass cover a cavity in which the movable element is arranged.