Abstract: A method for fabricating a semiconductor device includes forming first and second gate structures overlying the semiconductor substrate, and depositing a layer of a silicide-resistant material over the first and second gate structures and over the semiconductor substrate. The method further includes forming sidewall spacers from the layer of silicide-resistant material adjacent the first gate structure and removing the silicide-resistant material adjacent the sidewall spacers to expose the silicon substrate in a source and drain region. Still further, the method includes implanting conductivity determining impurities in the source and drain region, depositing a silicide forming metal, and annealing the semiconductor device to form a silicide in the source and drain region. The silicide-resistant material is not removed from over the second gate structure so as to prevent silicide formation at the second gate structure.

Abstract: A method for fabricating a semiconductor device includes forming first and second gate structures overlying the semiconductor substrate, and depositing a layer of a silicide-resistant material over the first and second gate structures and over the semiconductor substrate. The method further includes forming sidewall spacers from the layer of silicide-resistant material adjacent the first gate structure and removing the silicide-resistant material adjacent the sidewall spacers to expose the silicon substrate in a source and drain region. Still further, the method includes implanting conductivity determining impurities in the source and drain region, depositing a silicide forming metal, and annealing the semiconductor device to form a silicide in the source and drain region. The silicide-resistant material is not removed from over the second gate structure so as to prevent silicide formation at the second gate structure.