Abstract: An electrical test method that provides an accurate, high throughput measurement of semiconductor device electrical characteristics using four-point test methods at the wafer-level. An electrical characteristic (e.g., RDSon) of at least one semiconductor device (e.g., a discrete power semiconductor device in wafer form) is first measured, using a four-point test method with a first force electrical connection and a first sense electrical connection, and recorded as a first measurement. The first force electrical connection and the first sense electrical connection are then transposed (i.e., swapped or switched) to provide a second force electrical connection and a second sense electrical connection. The electrical characteristic is subsequently re-measured, and recorded as a second measurement, using the four-point test method, the second force electrical connection and the second sense electrical connection.

Abstract: A high-throughput apparatus and method for electrical testing of a plurality of semiconductor devices. The method includes electrically connecting the semiconductor devices to a common set of electrical supplies and electrical meters via a plurality of relays. Next, an electrical test (e.g., a leakage current or breakdown voltage test) is conducted on the semiconductor devices in a simultaneous manner using the common set, and a result of the electrical test is recorded. Subsequently, a determination of whether the result has a specific relationship to a predetermined value is made. If the result has the specific relationship, the semiconductor devices are organized into a first subdivision that is electrically connected to the common set via the relays and a second subdivision that is electrically disconnected from the common set using the relays. Thereafter, the electrical test is re-conducted on the first subdivision. The apparatus includes a common set of electrical supplies (e.g.