Abstract: Methods and apparatus for processing a substrate using plasma are disclosed. The apparatus includes a plasma processing system having a process gas supply arrangement for supplying a process gas into an interior region of said chamber and a plasma source configured for generating said plasma at least from said process gas. The apparatus also includes an acoustic energy generator arrangement configured to apply acoustic energy to at least one of a chamber component and said substrate, wherein said acoustic energy generator generates said acoustic energy in the range of 10 Hz to 1 MHz using at least one of a piezoelectric transducing, mechanical coupling vibration, wafer backside gas pulsing, pulsing of said process gas, pressure wave pulsing, and electromagnetic coupling.