Abstract: A microwave integrated circuit includes a silicon chip having a pair of diffused junctions. A pair of gold leads 0.3 mils thick are in contact with respective ones of the diffused junctions depending from the chip parallel to the top surface of an alumina substrate 15 mils thick with an adhesive layer of an alumina-filled epoxy at most 0.1 mils thick between the beam leads and the substrate.

Abstract: A switching circuit comprising a substrate of semiconductor material, a first switching device (e.g., a diode) formed in a first region of the substrate, a second switching device (e.g., a diode) formed in a second region of the substrate integral with the first region, the second switching device being electrically coupled to the first switching device, and means, disposed in the substrate, for electrically isolating the first substrate region from the second substrate region.

Abstract: Method of manufacturing silicon mesa diodes from a wafer of silicon. The surface of the wafer is coated with a first layer of silicon nitride and a second layer of silicon oxide. By masking and etching procedures, silicon nitride is left only on the portions of the surface defining the mesas to be formed. The wafer is etched to form the mesas and then treated to form a passivating silicon oxide coating at all the exposed surfaces of the wafer. The silicon nitride is removed from the upper surfaces of the mesas and metal contacts are applied to these upper surfaces. The wafer is subsequently divided into discrete dice, each containing a mesa, and the dice are mounted in suitable enclosures.