Abstract: A gallium nitride (GaN) power device includes a GaN substrate structure having a first surface and a second surface, a metallic layer coupled to the second surface of the GaN substrate structure, and an active region including an array of vertical fin-based field effect transistors (FinFETs) coupled to the GaN substrate structure. The GaN power device also includes an edge termination structure circumscribing the active region and a seal ring structure circumscribing the edge termination structure and comprising a seal ring metal pad operable to conduct charge from the edge termination structure to the metallic layer.

Abstract: A power supply for supplying power to a load comprises a coupled inductor having a primary winding, at least one secondary winding, and a regulation circuit coupled to the primary winding that allows current or voltage to be supplied to the coupled inductor for a time duration, An error detection circuit is coupled to the secondary winding to compare a voltage or current supplied to the load against at least one threshold. Upon exceeding the threshold, the error detection circuit alters the voltage or current at the secondary winding, which causes a reflected feedback signal to be generated. A reflected feedback regulation circuit coupled to the primary winding provides an information signal to the regulation circuit responsive to the reflected feedback signal. The information signal increases or decreases the time duration to regulate the power supplied to the load.