Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example, ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. The reaction product is extracted as a gas from the slurry and monitored using a threshold photoionization mass spectrometer.

Abstract: A method and apparatus are described for detecting an endpoint of a film removal process in which a target film overlying a stopping film is removed. A chemical reaction product is generated from at least one of the target film and the stopping film; this chemical reaction product is converted to a separate product. The separate product is exposed to ionizing radiation. The ionization current generated by the radiation is monitored as the target film is removed. A change in the ionization current corresponds to a change in concentration of the separate product, thereby indicating the endpoint of the film removal process. In the particular case of removal of a silicon dioxide film overlying a silicon nitride film by chemical-mechanical polishing, the reaction product is ammonia extracted from the polishing slurry. The ammonia is converted to ammonium chloride by a reaction with hydrogen chloride vapor.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product by threshold photoionization mass spectroscopy as the target film is removed.

Abstract: A method for detecting the endpoint for removal of a target film overlying a stopping film by chemical-mechanical polishing using a slurry, by removing the target film with a polishing process that generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) in the slurry, adding to the slurry a reagent which produces a characteristic result upon reacting with the chemical reaction product, and monitoring the slurry for the characteristic result as the target film is removed.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively produces a gaseous chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, mixing the gaseous chemical reaction product present with a separate gas to form solid particles, and monitoring the amount of the solid particles as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid, mixing the gas with another substance to form solid particles, and monitoring the amount of the solid particles to detect the substance.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid and monitoring the gas to detect the substance.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

Abstract: A colloidal silica slurry containing triethanolamine is used in a chemical mechanical polishing process to polish multiple material substrates, such as silicon wafers containing silicon oxide where a thin underlayer of silicon nitride is used as a stop layer. The colloidal silica slurry containing triethanolamine is capable of achieving an oxide to nitride selectivity during polishing up to a demonstrated ratio of 28:1.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, and monitoring the level of the separate product as the target film is removed.

Abstract: A desired reagent is delivered to a workpiece undergoing a chemical mechanical polishing process with a chemical mechanical planarization apparatus. A slurry and polishing pad are provided for the polishing process. Reagent containing microcapsules are also provided, the microcapsules encapsulating a desired reagent. The workpiece is polished with a combination of the slurry, the polishing pad, and the microcapsules, wherein the encapsulated reagents are controllably released during the polishing step via manipulation of a polishing parameter. In one embodiment, the microcapsules are included in the slurry. In an alternate embodiment, the microcapsules are embedded within the polishing pad.

Abstract: An apparatus and method for improving planarity of chemical-mechanical polishing of substrates are provided. The apparatus includes a platen having a planar surface upon which a polishing pad is removably affixed. The pad has an exposed planar surface, and a carrier removably holds the substrate against the planar surface. The apparatus includes a slurry distribution system and a slurry removal system. The slurry distribution system provides slurry to an instantaneous interface area of the substrate and planar surface through the platen and pad, while the slurry removal system removes slurry from the instantaneous interface area through the pad and the platen, notwithstanding rotation of the platen and/or substrate, as well as linear movement of the substrate relative to the rotating platen.