Patents by Inventor Clint E. BORDELON

Clint E. BORDELON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices
    Patent number: 9418856
    Abstract: Methods of forming a semiconductor device are provided in which a first titanium-aluminum layer is formed in a recess. A first titanium layer is formed in the recess on top of the first titanium-aluminum layer. A first aluminum layer is formed in the recess on top of the first titanium layer to form a first preliminary gate electrode structure in the recess. The first preliminary gate electrode structure is heated to a temperature sufficient to convert the first titanium-aluminum layer, the first titanium layer and at least some of the first aluminum layer into a second titanium-aluminum layer. A second titanium layer is formed on top of the second titanium-aluminum layer. A second aluminum layer that is thicker than the first aluminum layer is then formed on top of the second titanium layer.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: August 16, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Clint E. Bordelon, David J. Williams, Sergei Drizlikh, Jun-Han Kim
  • METHODS OF FORMING TITANIUM-ALUMINUM LAYERS FOR GATE ELECTRODES AND RELATED SEMICONDUCTOR DEVICES
    Publication number: 20160133470
    Abstract: Methods of forming a semiconductor device are provided in which a first titanium-aluminum layer is formed in a recess. A first titanium layer is formed in the recess on top of the first titanium-aluminum layer. A first aluminum layer is formed in the recess on top of the first titanium layer to form a first preliminary gate electrode structure in the recess. The first preliminary gate electrode structure is heated to a temperature sufficient to convert the first titanium-aluminum layer, the first titanium layer and at least some of the first aluminum layer into a second titanium-aluminum layer. A second titanium layer is formed on top of the second titanium-aluminum layer. A second aluminum layer that is thicker than the first aluminum layer is then formed on top of the second titanium layer.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 12, 2016
    Inventors: Clint E. BORDELON, David J. WILLIAMS, Sergei DRIZLlKH, Jun-Han KIM