Abstract: A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads.

Abstract: A method for assembling a probe card for wafer level testing of a plurality of semiconductor devices simultaneously is disclosed. The probe card may include a circuit board including wafer level testing circuitry, a partially flexible silicon substrate, a plurality of test probes disposed at least partially in the substrate for engaging a plurality of corresponding electrical contacts in a wafer under test, and a compressible underfill coupling the substrate to the circuit board. The method includes aligning and assembling the foregoing components, and curing the underfill. The probe card may be used for wafer level burn-in testing. In some embodiments, the probe card may include active test control circuitry embedded in the silicon substrate for conducting wafer level high frequency testing.

Abstract: A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads.

Abstract: A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads. In some embodiments, the test pads may be C4 test pads.

Abstract: A probe card for wafer level testing of a plurality of semiconductor devices simultaneously. The probe card may include a circuit board including wafer level testing circuitry, a partially flexible silicon substrate, a plurality of test probes disposed at least partially in the substrate for engaging a plurality of corresponding electrical contacts in a wafer under test, and a compressible underfill coupling the substrate to the circuit board. The probe card may be used for wafer level burn-in testing. In some embodiments, the probe card may include active test control circuitry embedded in the silicon substrate for conducting wafer level high frequency testing.

Abstract: A system includes a central processing unit (CPU); a memory device in communication with the CPU, and a direct memory access (DMA) controller in communication with the CPU and the memory device. The memory device includes a plurality of vertically stacked chips and a plurality of input/output (I/O) ports. Each of the I/O ports connected to at least one of the plurality of chips through a through silicon via. The DMA controller is configured to manage to transfer of data to and from the memory device.

Abstract: A probe card for wafer level testing of a plurality of semiconductor devices simultaneously. The probe card may include a circuit board including wafer level testing circuitry, a partially flexible silicon substrate, a plurality of test probes disposed at least partially in the substrate for engaging a plurality of corresponding electrical contacts in a wafer under test, and a compressible underfill coupling the substrate to the circuit board. The probe card may be used for wafer level burn-in testing. In some embodiments, the probe card may include active test control circuitry embedded in the silicon substrate for conducting wafer level high frequency testing.

Abstract: A probe card for wafer level testing of a plurality of semiconductor devices simultaneously. The probe card may include a circuit board including wafer level testing circuitry, a partially flexible silicon substrate, a plurality of test probes disposed at least partially in the substrate for engaging a plurality of corresponding electrical contacts in a wafer under test, and a compressible underfill coupling the substrate to the circuit board. The probe card may be used for wafer level burn-in testing. In some embodiments, the probe card may include active test control circuitry embedded in the silicon substrate for conducting wafer level high frequency testing.

Abstract: A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than, the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads. In some embodiments, the test pads may be C4 test pads.