Abstract: A method of forming conductive interconnections is disclosed herein. In one illustrative embodiment, the method comprises forming an opening in a layer of insulation material, forming a first plurality of silicon seed atoms in the opening, and performing a first tungsten growing process to form tungsten material in the opening. The method further comprises forming a second plurality of silicon seed atoms in the opening above at least a portion of the tungsten material formed during the first tungsten growing process, and performing at least one additional tungsten growing process after forming the second plurality of silicon seed atoms to further form tungsten material in the opening.

Abstract: Semiconductor structures having dielectric material layers that are below 3 nanometers in thickness can now be measured with greater precision and in less time using a SIMS device. In an example embodiment of the present invention, a method of measuring the thickness of a dielectric material layer of a semiconductor structure formed on a substrate includes directing a high energy ion beam at a portion of the substrate and sputtering off a plurality of targeted ions from the substrate. The thickness of the dielectric material layer is then determined as a function of a dosage level of the targeted ion and a density of the targeted ion in the dielectric material.