Patents by Inventor Clive O'Dell

Clive O'Dell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor assembly with conductive frame for I/O standoff and thermal dissipation
    Patent number: 11393743
    Abstract: A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 19, 2022
    Assignee: Infineon Technologies AG
    Inventors: Stuart Cardwell, Chee Yang Ng, Josef Maerz, Clive O'Dell, Mark Pavier
  • Semiconductor Assembly with Conductive Frame for I/O Standoff and Thermal Dissipation
    Publication number: 20210193560
    Abstract: A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 24, 2021
    Inventors: Stuart Cardwell, Chee Yang Ng, Josef Maerz, Clive O'Dell, Mark Pavier
  • Surface mountable power components
    Patent number: 9362221
    Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: June 7, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Mark Pavier, Daniel Cutler, Scott Palmer, Clive O'Dell, Rupert Burbidge
  • Surface Mountable Power Components
    Publication number: 20150221588
    Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
    Type: Application
    Filed: April 16, 2015
    Publication date: August 6, 2015
    Inventors: Mark Pavier, Daniel Cutler, Scott Palmer, Clive O'Dell, Rupert Burbidge
  • Surface mountable power components
    Patent number: 9012990
    Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: April 21, 2015
    Assignee: International Rectifier Corporation
    Inventors: Mark Pavier, Daniel Cutler, Scott Palmer, Clive O'Dell, Rupert Burbidge
  • Surface Mountable Power Components
    Publication number: 20140103393
    Abstract: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
    Type: Application
    Filed: September 4, 2013
    Publication date: April 17, 2014
    Applicant: INTERNATIONAL RECTIFIER CORPORATION
    Inventors: Mark Pavier, Daniel Cutler, Scott Palmer, Clive O'Dell, Rupert Burbidge