Abstract: A method of fabricating a dynamic random access memory is provided. A word line structure is formed on a substrate. A source region and a drain region are formed in the substrate on each side of the word line structure. Spacers are formed on the sidewalls of the word line structure and then a first dielectric layer having an opening for forming bit line contact and an opening for forming node contact pad is formed. A conductive layer is formed over the substrate covering the first dielectric layer and filling the bit line contact opening and the node contact pad opening. A bit line is defined and a node contact pad is formed in the node contact pad opening. A second dielectric layer having a node contact opening is formed. A node contact is formed in the node contact opening. A bottom electrode is formed on the node contact.