Patents by Inventor Cobie B. Loper

Cobie B. Loper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11664079
    Abstract: Control logic in a memory device executes a first operation comprising a first set of programming pulses and a first set of program verify operations on a first portion of a first subset of memory cells to be programmed to identify a first start voltage level. A second set of programming pulses including at least one programming pulse having the first start voltage level is caused to be applied to program a second portion of the first subset of memory cells. A second operation including a third set of programming pulses and a second set of program verify operations are executed on a first portion of the second subset of memory cells to identify a second start voltage level.
    Type: Grant
    Filed: September 8, 2022
    Date of Patent: May 30, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Lawrence Celso Miranda, Eric N. Lee, Tong Liu, Sheyang Ning, Cobie B. Loper, Ugo Russo
  • Publication number: 20230005553
    Abstract: Control logic in a memory device executes a first operation comprising a first set of programming pulses and a first set of program verify operations on a first portion of a first subset of memory cells to be programmed to identify a first start voltage level. A second set of programming pulses including at least one programming pulse having the first start voltage level is caused to be applied to program a second portion of the first subset of memory cells. A second operation including a third set of programming pulses and a second set of program verify operations are executed on a first portion of the second subset of memory cells to identify a second start voltage level.
    Type: Application
    Filed: September 8, 2022
    Publication date: January 5, 2023
    Inventors: Lawrence Celso Miranda, Eric N. Lee, Tong Liu, Sheyang Ning, Cobie B. Loper, Ugo Russo
  • Patent number: 11462281
    Abstract: Control logic in a memory device identifies a first group of wordlines associated with a first subset of memory cells of a set of memory cells to be programmed. A first dynamic start voltage operation including a first set of programming pulses and a first set of program verify operations is executed on a first portion of the first subset of memory cells to identify a first dynamic start voltage level, the executing of the first dynamic start voltage operation includes causing the first set of programming pulses to be applied to at least a portion of the first group of wordlines. A second set of programming pulses including at least one programming pulse having the first dynamic start voltage level are caused to be applied to the first group of wordlines to program a second portion of the first subset of memory cells of the set of memory cells. A second group of wordlines associated with a second subset of memory cells to be programmed is identified.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: October 4, 2022
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Lawrence Celso Miranda, Eric N. Lee, Tong Liu, Sheyang Ning, Cobie B. Loper, Ugo Russo