Abstract: This document describes wet chemical etching systems designed to apply etching chemistry to a substrate's surface. The system, in some examples, includes a rotor that grips and rotates the substrate, in conjunction with a weir that forms a crest of wet chemistry beneath it. As the substrate rotates, surface tension draws the wet chemistry onto its surface. The system may also include a controller that manages the substrate's movement through different positions.

Abstract: An electrochemical deposition system includes a tank, a primary anode, and a secondary anode, all positioned within the tank. When a substrate is placed in the tank, the primary anode is situated at a distance from the substrate. The secondary anode is located closer to the substrate, positioned between the primary anode and the substrate. The secondary anode has one or more electrically active elements designed to affect the deposition process.

Abstract: Sulfate salts are removed from a gold sulfite plating solution via supersaturating a sulfate-rich gold sulfite plating solution to form a sulfate-poor saturated gold sulfite plating solution, and un-saturating the sulfate-poor saturated gold sulfite plating solution to form an unsaturated sulfate-poor gold sulfite plating solution. Gold from the unsaturated sulfate-poor gold sulfite plating solution is electrodeposited onto a workpiece.

Abstract: An electrochemical deposition fountain reactor for processing spinning semiconductor wafers can include a perforated ionic membrane near the wafer surface through which electrolyte flows. This allows high velocity electrolyte jets to impinge the wafer surface at low bulk flow rates, which reduces the boundary layer at the wafer surface and allows for better replenishment of ions at the wafer surface.

Abstract: An electrochemical deposition fountain reactor for processing spinning semiconductor wafers can include a perforated ionic membrane near the wafer surface through which electrolyte flows. This allows high velocity electrolyte jets to impinge the wafer surface at low bulk flow rates, which reduces the boundary layer at the wafer surface and allows for better replenishment of ions at the wafer surface.