Abstract: Colored CTE modifiers may be added to a glass frit system to modify the CTE of a resulting fired enamel. The CTE modifier is colored. The colored CTE modifier may include a modified Pseudo-Brookite type material having a formula Al2TiO5, where Al and/or Ti are partially substituted with one or more coloring ions including Fe, Cr, Mn, Co, Ni, and Cu; a modified Cordierite type material having a formula Mg2Al4Si5O18, wherein Mg and/or Al is partially substituted with one or more of the coloring ions; a Perovskite type material having a formula Sm1?xSrxMnO3??, where x=0.0-0.5 and ?=0.0-0.25, or a modified version of the Perovskite type material wherein Sr is partially substituted with Ba and/or Ca; a modified magnesium pyrophosphate type material having a formula Mg2P2O7 wherein Mg is substituted with Co and/or Zn ions; or combinations thereof.

Abstract: A phosphor in glass (PiG) cover is provided to modulate the color emitted from an LED chip. The PiG cover includes an active layer including glass and phosphor, and a secondary layer including glass and free of phosphor. The active layer is stacked on the secondary layer to form the PiG cover. Alternately the PiG includes an active layer sandwiched between two secondary layers. Two or more active layers can be stacked to each other or disposed side-by-side. An LED chip is arranged under the PiG cover to form an LED package.

Abstract: A phosphor in glass (PiG) cover is provided to modulate the color emitted from an LED chip. The PiG cover includes an active layer including glass and phosphor, and a secondary layer including glass and free of phosphor. The active layer is stacked on the secondary layer to form the PiG cover. Alternately the PiG includes an active layer sandwiched between two secondary layers. Two or more active layers can be stacked to each other or disposed side-by-side. An LED chip is arranged under the PiG cover to form an LED package.

Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.