Patents by Inventor Colby Van Vooren
Colby Van Vooren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7713456Abstract: Processing a die that has an edge and a substrate upon which a layer of moisture permeable material is disposed. The moisture permeable material extends to the edge of the die. One embodiment comprises interrupting the layer of moisture permeable material to form a gap at a boundary near the edge, thereby to substantially block movement of moisture through the gap of the moisture permeable material.Type: GrantFiled: January 27, 2005Date of Patent: May 11, 2010Assignee: Hewlett-Packard Development Compnay, L.P.Inventors: Simon Dodd, Sean P. McClelland, Colby Van Vooren, Terry E. McMahon, Antonio Cruz-Uribe
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Patent number: 6938340Abstract: Described herein is a method of forming a printhead. A silicon-on-insulator (SOI) substrate, including a first silicon layer, a second silicon layer, and an oxide layer between the first silicon layer and the second silicon layer, is provided. A plurality of thin film layers is formed on a first surface of the substrate. At least one of the layers forms a plurality of ink ejection elements. Ink feed holes are formed through the thin film layers. An opening is formed in the substrate by (a) etching the first silicon layer of the SOI substrate using a wet etch to etch a trench in the first silicon layer extending to the oxide layer; (b) etching an opening in the oxide layer; and (c) etching an opening in the second silicon layer to form an ink path between a backside of the SOI substrate and a topside of the SOI substrate.Type: GrantFiled: November 14, 2001Date of Patent: September 6, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Charles C. Haluzak, Colby Van Vooren
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Patent number: 6902259Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: GrantFiled: June 6, 2002Date of Patent: June 7, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Chien-Hua Chen, Donald E. Wenzel, Qin Liu, Naoto Kawamura, Colby Van Vooren, Colin C Davis, Richard W Seaver, Carl Wu, Jeffery S Hess
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Patent number: 6885083Abstract: Processing a die that has an edge and a substrate upon which a layer of moisture permeable material is disposed. The moisture permeable material extends to the edge of the die. One embodiment comprises interrupting the layer of moisture permeable material to form a gap at a boundary near the edge, thereby to substantially block movement of moisture through the gap of the moisture permeable material.Type: GrantFiled: October 31, 2002Date of Patent: April 26, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Simon Dodd, Sean P. McClelland, Colby Van Vooren, Terry E. McMahon, Antonio Cruz-Uribe
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Publication number: 20040087151Abstract: Processing a die that has an edge and a substrate upon which a layer of moisture permeable material is disposed. The moisture permeable material extends to the edge of the die. One embodiment comprises interrupting the layer of moisture permeable material to form a gap at a boundary near the edge, thereby to substantially block movement of moisture through the gap of the moisture permeable material.Type: ApplicationFiled: October 31, 2002Publication date: May 6, 2004Inventors: Simon Dodd, Sean P. McClelland, Colby Van Vooren, Terry E. McMahon, Antonio Cruz-Uribe
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Patent number: 6640402Abstract: An inkjet printer printhead utilizes a substrate, an orifice layer, and a directionally biased electrostrictive polymer ink actuator disposed between the orifice layer and the substrate to eject ink from the printhead.Type: GrantFiled: August 1, 2000Date of Patent: November 4, 2003Assignee: Hewlett-Packard Development Company, L.P.Inventors: Colby Van Vooren, Timothy L. Weber, Colin C. Davis, Naoto Kawamura
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Publication number: 20030058309Abstract: Described herein is a monolithic printhead formed using integrated circuit techniques. Thin film layers, including ink ejection elements, are formed on a top surface of a silicon substrate. The various layers are etched to provide conductive leads to the ink ejection elements. A trench is etched in the bottom surface of the substrate, leaving a thin silicon shelf or membrane. Ink feed holes (individual holes or a second trench) are formed in the silicon shelf or membrane, and ink feed holes are formed in the thin film layers, so that ink can flow into the trench and into each ink ejection chamber through the ink feed holes. The ink ejection elements reside over the silicon shelf or membrane so that the shelf or membrane provides mechanical stability, prevents thin film layer buckling, and improves the heat transfer between the ink ejection elements and the substrate. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate.Type: ApplicationFiled: November 14, 2001Publication date: March 27, 2003Inventors: Charles C. Haluzak, Colby Van Vooren
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Patent number: 6520627Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: GrantFiled: February 1, 2002Date of Patent: February 18, 2003Assignee: Hewlett-Packard CompanyInventors: Chien-Hau Chen, Donald E. Wenzel, Qin Liu, Naoto Kawamura, Richard W. Seaver, Carl Wu, Colby Van Vooren, Jeffery S. Hess, Colin C. Davis
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Patent number: 6517735Abstract: A monolithic inkjet printhead formed using integrated circuit techniques is described. A silicon substrate has formed on its top surface a thin polysilicon layer in the area in which a trench is to be later formed in the substrate. The edges of the polysilicon layer align with the intended placement of ink feed holes leading into ink ejection chambers. Thin film layers, including a resistive layer, are formed on the top surface of the silicon substrate and over the polysilicon layer. An orifice layer is formed on the top surface of the thin film layers to define the nozzles and ink ejection chambers. A trench mask is formed on the bottom surface of the substrate. A trench is etched (using, for example, TMAH) through the exposed bottom surface of the substrate and to the polysilicon layer. The etching of the polysilicon layer exposes fast etch planes of the silicon. The TMAH then rapidly etches the silicon substrate along the etch planes, thus aligning the edges of the trench with the polysilicon.Type: GrantFiled: March 15, 2001Date of Patent: February 11, 2003Assignee: Hewlett-Packard CompanyInventors: Kenneth E. Trueba, Charles C. Haluzak, David R. Thomas, Colby Van Vooren
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Publication number: 20020145644Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: ApplicationFiled: June 6, 2002Publication date: October 10, 2002Inventors: Chien-Hua Chen, Donald E. Wenzel, Qin Liu, Naoto Kawanura, Colby Van Vooren, Colin C. Davis, Richard W. Seaver, Carl Wu, Jeffery S. Hess
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Publication number: 20020129495Abstract: A monolithic inkjet printhead formed using integrated circuit techniques is described. A silicon substrate has formed on its top surface a thin polysilicon layer in the area in which a trench is to be later formed in the substrate. The edges of the polysilicon layer align with the intended placement of ink feed holes leading into ink ejection chambers. Thin film layers, including a resistive layer, are formed on the top surface of the silicon substrate and over the polysilicon layer. An orifice layer is formed on the top surface of the thin film layers to define the nozzles and ink ejection chambers. A trench mask is formed on the bottom surface of the substrate. A trench is etched (using, for example, TMAH) through the exposed bottom surface of the substrate and to the polysilicon layer. The etching of the polysilicon layer exposes fast etch planes of the silicon. The TMAH then rapidly etches the silicon substrate along the etch planes, thus aligning the edges of the trench with the polysilicon.Type: ApplicationFiled: March 15, 2001Publication date: September 19, 2002Inventors: Kenneth E. Trueba, Charles C. Haluzak, David R. Thomas, Colby Van Vooren
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Patent number: 6447102Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: GrantFiled: June 26, 2000Date of Patent: September 10, 2002Assignee: Hewlett-Packard CompanyInventors: Chien-Hau Chen, Donald E. Wenzel, Qin Liu, Naoto Kawamura, Richard W. Seaver, Carl Wu, Colby Van Vooren, Jeffery S. Hess, Colin C. Davis
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Publication number: 20020071006Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: ApplicationFiled: February 1, 2002Publication date: June 13, 2002Inventors: Chien-Hau Chen, Donald E. Wenzel, Qin Liu, Naoto Kawamura, Richard W. Seaver, Carl Wu, Colby Van Vooren, Jeffery S. Hess, Colin C. Davis
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Patent number: 6398348Abstract: Described herein is a monolithic printhead formed using integrated circuit techniques. Thin film layers, including ink ejection elements, are formed on a top surface of a silicon substrate. The various layers are etched to provide conductive leads to the ink ejection elements. A trench is etched in the bottom surface of the substrate, leaving a thin silicon shelf or membrane. Ink feed holes (individual holes or a second trench) are formed in the silicon shelf or membrane, and ink feed holes are formed in the thin film layers, so that ink can flow into the trench and into each ink ejection chamber through the ink feed holes. The ink ejection elements reside over the silicon shelf or membrane so that the shelf or membrane provides mechanical stability, prevents thin film layer buckling, and improves the heat transfer between the ink ejection elements and the substrate. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate.Type: GrantFiled: September 5, 2000Date of Patent: June 4, 2002Assignee: Hewlett-Packard CompanyInventors: Charles C. Haluzak, Colby Van Vooren
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Patent number: 6162589Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.Type: GrantFiled: March 2, 1998Date of Patent: December 19, 2000Assignee: Hewlett-Packard CompanyInventors: Chien-Hau Chen, Donald E. Wenzel, Qin Liu, Naoto Kawamura, Richard W. Seaver, Carl Wu, Colby Van Vooren, Jeffery S. Hess, Colin C. Davis
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Patent number: 6126273Abstract: An inkjet printer printhead utilizes a substrate, an orifice layer, and a directionally biased electrostrictive polymer ink actuator disposed between the orifice layer and the substrate to eject ink from the printhead.Type: GrantFiled: April 30, 1998Date of Patent: October 3, 2000Assignee: Hewlett-Packard Co.Inventors: Colby Van Vooren, Timothy L. Weber, Colin C. Davis, Naoto Kawamura