Patents by Inventor Cole J. Ritter, III

Cole J. Ritter, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9701540
    Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: July 11, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventor: Cole J. Ritter, III
  • Patent number: 9446958
    Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: September 20, 2016
    Assignee: L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges Claude
    Inventors: Cole J. Ritter, III, Matthew Damien Stephens
  • Patent number: 8801963
    Abstract: The present invention relates to a process for the preparation of stannane and deuterostannane by reacting a stannic halide with lithium aluminum hydride or aluminum deuteride respectively in a polydentate solvent.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: August 12, 2014
    Assignee: Voltaix, LLC
    Inventor: Cole J. Ritter, III
  • Publication number: 20140050647
    Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.
    Type: Application
    Filed: October 28, 2013
    Publication date: February 20, 2014
    Applicant: L'Air Liquide Societe Anonyme pour l'Etude et L'Exploitation des Procedes Georges Claude
    Inventors: Cole J. Ritter, III, Matthew Damien Stephens
  • Patent number: 8568682
    Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: October 29, 2013
    Assignee: Voltaix, Inc.
    Inventor: Cole J. Ritter, III
  • Patent number: 8524582
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: September 3, 2013
    Assignee: The Arizona Board of Regents
    Inventors: John Kouvetakis, Cole J. Ritter, III
  • Patent number: 8518360
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: August 27, 2013
    Inventors: John Kouvetakis, Cole J. Ritter, III, Changwu Hu, Ignatius S. T. Tsong, Andrew Chizmeshya
  • Publication number: 20130129607
    Abstract: The present invention relates to a process for the preparation of stannane and deuterostannane by reacting a stannic halide with lithium aluminum hydride or aluminum deuteride respectively in a polydentate solvent.
    Type: Application
    Filed: August 10, 2011
    Publication date: May 23, 2013
    Inventor: Cole J. Ritter, III
  • Publication number: 20130032857
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Application
    Filed: July 6, 2012
    Publication date: February 7, 2013
    Applicant: The Arizona Board of Regents, a body corporate acting on behalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter, III, Changwu Hu, Ignatius S.T. Tsong, Andrew Chizmeshya
  • Publication number: 20120217618
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Application
    Filed: February 28, 2012
    Publication date: August 30, 2012
    Applicant: The Arizona Board of Regents, a body corporated acting on behalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter, III
  • Patent number: 8216537
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: July 10, 2012
    Assignee: Arizona Board of Regents
    Inventors: John Kouvetakis, Cole J. Ritter, III, Changwu Hu, Ignatius S. T. Tsong, Andrew Chizmeshya
  • Patent number: 8133802
    Abstract: The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: March 13, 2012
    Assignee: Arizona Board of Regents
    Inventors: John Kouvetakis, Cole J. Ritter, III
  • Publication number: 20120020864
    Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
    Type: Application
    Filed: July 12, 2011
    Publication date: January 26, 2012
    Applicants: Arizona State
    Inventors: John Kouvetakis, Cole J. Ritter, III, John Tolle
  • Patent number: 7981392
    Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
    Type: Grant
    Filed: December 31, 2004
    Date of Patent: July 19, 2011
    Assignee: The Arizona Board of Regents, a body corporate of the state of Arizona acting for and on behalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter, III, John Tolle
  • Publication number: 20100012972
    Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
    Type: Application
    Filed: November 21, 2006
    Publication date: January 21, 2010
    Applicant: The Arizona Board of Regents, a body corparate acting onbehalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter III, Changwu Hu, Ignatius S.T. Tsong, Andrew Chizmeshya
  • Publication number: 20090050935
    Abstract: The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
    Type: Application
    Filed: November 21, 2006
    Publication date: February 26, 2009
    Applicant: The Arizona Board ofg Regents, a body corporate acting on behalf of Arizona State University
    Inventors: John Kouvetakis, Cole J. Ritter III