Abstract: An ionization chamber is provided with a series of parallel plates spaced from each other and with holes passing therethrough. Alternating plates have either a highest high voltage or a lower high voltage provided thereto, such as through a DC transformer coupled to an electric power source. Holes in alternating plates are preferably offset so that airflow through the plates occurs along curving pathways. The plates are sufficiently highly charged to cause carbon dioxide to be ionized and for carbon ions to become trapped within wells defining lowest regions of electric charge within an electric field inside the ionization chamber. Fans control airflow through the ionization chamber. A dehumidifier is provided upstream of the ionization chamber to reduce moisture content within the incoming gas. After the carbon has collected within the wells, harvesting of the carbon ions as carbon nano particle powder can occur within a carbon cache.

Abstract: A display system for sensing a finger of a user applied to the display system includes a display panel; a sensor for sensing the finger; a sensing light source configured to emit a first light having a first wavelength W1; and a reflective polarizer disposed between the display panel and the sensor. For a substantially normally incident light, an optical transmittance of the reflective polarizer versus wavelength for a first polarization state has a band edge such that for a first wavelength range extending from a smaller wavelength L1 to a greater wavelength L2 and including W1, where 30 nm?L2?L1?50 nm and L1 is greater than and within about 20 nm of a wavelength L3 corresponding to an optical transmittance of about 50% along the band edge, the optical transmittance has an average of greater than about 75%.

Abstract: Instruments, systems, and methods for securing anchors, elastomeric devices, and other elements in bone. In one example, an instrument includes a collar movable between a locked configuration that prevents an insertion shaft of the instrument from translating relative to a drive shaft of the instrument and an unlocked configuration that does not prevent the insertion shaft from translating relative to the drive shaft. In another example, an instrument for securing an elastomeric device to bone includes a lock movable between locked and unlocked configurations (e.g. similar to or the same as the collar in the previous example) that facilitates insertion of the elastomeric device into a bone opening when the lock is in the locked configuration, and subsequent insertion of a bone implant into the bone opening when the lock is in the unlocked configuration.

Abstract: Instruments, systems, and methods for securing anchors, elastomeric devices, and other elements in bone. In one example, an instrument includes a collar movable between a locked configuration that prevents an insertion shaft of the instrument from translating relative to a drive shaft of the instrument and an unlocked configuration that does not prevent the insertion shaft from translating relative to the drive shaft. In another example, an instrument for securing an elastomeric device to bone includes a lock movable between locked and unlocked configurations (e.g. similar to or the same as the collar in the previous example) that facilitates insertion of the elastomeric device into a bone opening when the lock is in the locked configuration, and subsequent insertion of a bone implant into the bone opening when the lock is in the unlocked configuration.

Abstract: Instruments, systems, and methods for securing anchors, elastomeric devices, and other elements in bone. In one example, an instrument includes a collar movable between a locked configuration that prevents an insertion shaft of the instrument from translating relative to a drive shaft of the instrument and an unlocked configuration that does not prevent the insertion shaft from translating relative to the drive shaft. In another example, an instrument for securing an elastomeric device to bone includes a lock movable between locked and unlocked configurations (e.g. similar to or the same as the collar in the previous example) that facilitates insertion of the elastomeric device into a bone opening when the lock is in the locked configuration, and subsequent insertion of a bone implant into the bone opening when the lock is in the unlocked configuration.

Abstract: Instruments, systems, and methods for securing anchors, elastomeric devices, and other elements in bone. In one example, an instrument includes a collar movable between a locked configuration that prevents an insertion shaft of the instrument from translating relative to a drive shaft of the instrument and an unlocked configuration that does not prevent the insertion shaft from translating relative to the drive shaft. In another example, an instrument for securing an elastomeric device to bone includes a lock movable between locked and unlocked configurations (e.g. similar to or the same as the collar in the previous example) that facilitates insertion of the elastomeric device into a bone opening when the lock is in the locked configuration, and subsequent insertion of a bone implant into the bone opening when the lock is in the unlocked configuration.

Abstract: Systems and methods for facilitating reservations of shared desks, phone booths, and other spaces or areas within a workspace for members of the workspace are described. For example, a space reservation system receives a request to reserve a space for a member and selects a space suitable for the member based on one or more work environment characteristics associated with the space. The system also presents various interfaces for displaying available spaces and facilitating interactions between the member and the space.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. A wall is formed in individual of the trenches laterally-between immediately-laterally-adjacent of the memory-block regions. The forming of the wall comprises lining sides of the trenches with insulative material comprising at least one of an insulative nitride and elemental-form boron. A core material is formed in the trenches to span laterally-between the at least one of the insulative nitride and the elemental-form boron. Structure independent of method is disclosed.

Abstract: Methods for generating a visualization of 3D data for a manufactured part are disclosed. The methods include scanning a part to obtain a digital representation, comparing the digital representation with a 3D model, and generating the visualization of the part having color and pattern shading to display portions of the part that topographically differ between the digital representation and the 3D model. Visualizations of 3D data for a manufactured part including a digital representation of the manufactured part as compared with a 3D model of the part are disclosed. The digital representation of the manufactured part illustrates the part having color and pattern shading to display portions of the part that topographically differ between the digital representation and the 3D model.

Abstract: Some embodiments include a method of forming an assembly (e.g., a memory array). A first opening is formed through a stack of alternating first and second levels. The first levels contain silicon nitride, and the second levels contain silicon dioxide. Some of the silicon dioxide of the second levels is replaced with memory cell structures. The memory cell structures include charge-storage regions adjacent charge-blocking regions. Tunneling material is formed within the first opening, and channel material is formed adjacent the tunneling material. A second opening is formed through the stack. The second opening extends through remaining portions of the silicon dioxide, and through the silicon nitride. The remaining portions of the silicon dioxide are removed to form cavities. Conductive regions are formed within the cavities. The silicon nitride is removed to form voids between the conductive regions. Some embodiments include memory arrays.

Abstract: Some embodiments include a method of forming an assembly (e.g., a memory array). A first opening is formed through a stack of alternating first and second levels. The first levels contain silicon nitride, and the second levels contain silicon dioxide. Some of the silicon dioxide of the second levels is replaced with memory cell structures. The memory cell structures include charge-storage regions adjacent charge-blocking regions. Tunneling material is formed within the first opening, and channel material is formed adjacent the tunneling material. A second opening is formed through the stack. The second opening extends through remaining portions of the silicon dioxide, and through the silicon nitride. The remaining portions of the silicon dioxide are removed to form cavities. Conductive regions are formed within the cavities. The silicon nitride is removed to form voids between the conductive regions. Some embodiments include memory arrays.

Abstract: An ionization chamber is provided with a series of parallel plates spaced from each other and with holes passing therethrough. Alternating plates have either a highest high voltage or a lower high voltage provided thereto, such as through a DC transformer coupled to an electric power source. Holes in alternating plates are preferably offset so that airflow through the plates occurs along curving pathways. The plates are sufficiently highly charged to cause carbon dioxide to be ionized and for carbon ions to become trapped within wells defining lowest regions of electric charge within an electric field inside the ionization chamber. Fans control airflow through the ionization chamber. A dehumidifier is provided upstream of the ionization chamber to reduce moisture content within the incoming gas. After the carbon has collected within the wells, harvesting of the carbon ions as carbon nano particle powder can occur within a carbon cache.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. A wall is formed in individual of the trenches laterally-between immediately-laterally-adjacent of the memory-block regions. The forming of the wall comprises lining sides of the trenches with insulative material comprising at least one of an insulative nitride and elemental-form boron. A core material is formed in the trenches to span laterally-between the at least one of the insulative nitride and the elemental-form boron. Structure independent of method is disclosed.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. A wall is formed in individual of the trenches laterally-between immediately-laterally-adjacent of the memory-block regions. The forming of the wall comprises lining sides of the trenches with insulative material comprising at least one of an insulative nitride and elemental-form boron. A core material is formed in the trenches to span laterally-between the at least one of the insulative nitride and the elemental-form boron. Structure independent of method is disclosed.

Abstract: A downhole tool and method of utilizing the downhole tool to make measurements in a wellbore formed in a formation and having different wellbore diameters. The downhole tool generally includes a tool body defined along a longitudinal central axis and having an internal passage extending longitudinally therethrough and an external pocket extending therealong; a sensor module having a sensor and being deployed within the external pocket; a spacer deployed in the external pocket, the spacer positioned between the sensor module and the tool body; and a clamp attached to the tool body, the clamp overlaying both the sensor module and the spacer to confine the sensor module within the external pocket. The spacer may have an inner concave surface engaging the sensor module and an outer convex surface seating in the external pocket.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. A wall is formed in individual of the trenches laterally-between immediately-laterally-adjacent of the memory-block regions. The forming of the wall comprises lining sides of the trenches with insulative material comprising at least one of an insulative nitride and elemental-form boron. A core material is formed in the trenches to span laterally-between the at least one of the insulative nitride and the elemental-form boron. Structure independent of method is disclosed.

Abstract: Some embodiments include a method of forming an assembly (e.g., a memory array). A first opening is formed through a stack of alternating first and second levels. The first levels contain silicon nitride, and the second levels contain silicon dioxide. Some of the silicon dioxide of the second levels is replaced with memory cell structures. The memory cell structures include charge-storage regions adjacent charge-blocking regions. Tunneling material is formed within the first opening, and channel material is formed adjacent the tunneling material. A second opening is formed through the stack. The second opening extends through remaining portions of the silicon dioxide, and through the silicon nitride. The remaining portions of the silicon dioxide are removed to form cavities. Conductive regions are formed within the cavities. The silicon nitride is removed to form voids between the conductive regions. Some embodiments include memory arrays.

Abstract: Some embodiments include a method of forming an assembly (e.g., a memory array). A first opening is formed through a stack of alternating first and second levels. The first levels contain silicon nitride, and the second levels contain silicon dioxide. Some of the silicon dioxide of the second levels is replaced with memory cell structures. The memory cell structures include charge-storage regions adjacent charge-blocking regions. Tunneling material is formed within the first opening, and channel material is formed adjacent the tunneling material. A second opening is formed through the stack. The second opening extends through remaining portions of the silicon dioxide, and through the silicon nitride. The remaining portions of the silicon dioxide are removed to form cavities. Conductive regions are formed within the cavities. The silicon nitride is removed to form voids between the conductive regions. Some embodiments include memory arrays.

Abstract: Systems and methods for facilitating reservations of shared desks, phone booths, and other spaces or areas within a workspace for members of the workspace are described. For example, a space reservation system receives a request to reserve a space for a member and selects a space suitable for the member based on one or more work environment characteristics associated with the space. The system also presents various interfaces for displaying available spaces and facilitating interactions between the member and the space.

Abstract: Some embodiments include a method of forming an assembly (e.g., a memory array). A first opening is formed through a stack of alternating first and second levels. The first levels contain silicon nitride, and the second levels contain silicon dioxide. Some of the silicon dioxide of the second levels is replaced with memory cell structures. The memory cell structures include charge-storage regions adjacent charge-blocking regions. Tunneling material is formed within the first opening, and channel material is formed adjacent the tunneling material. A second opening is formed through the stack. The second opening extends through remaining portions of the silicon dioxide, and through the silicon nitride. The remaining portions of the silicon dioxide are removed to form cavities. Conductive regions are formed within the cavities. The silicon nitride is removed to form voids between the conductive regions. Some embodiments include memory arrays.