Abstract: An embodiment of an electronic apparatus may include one or more substrates, and a controller coupled to the one or more substrates, the controller including circuitry to control access to NAND-based storage media that includes a plurality of NAND devices, maintain respective read disturb (RD) counters for each of two or more tracked units at respective granularities, maintain respective global RD counters for each of the two or more tracked units and, in response to a read request, increment one or more global RD counters that correspond to the read request, determine if a global RD counter for a tracked unit matches a random number associated with the tracked unit and, if so determined, increment a RD counter for the tracked unit that corresponds to the read request and generate a new random number for the tracked unit. Other embodiments are disclosed and claimed.

Abstract: A method and apparatus to reduce read retry operations in a NAND Flash memory is provided. To reduce the number of read retries for future reads, a word line group is assigned an optimal read voltage, the reference voltage that results in eliminating the read error for the word line is selected as the optimal read voltage (also referred to as a “sticky voltage”) for the word line group to be used for a next read of the page. An optimal read voltage per word line group for the page per NAND Flash memory die is stored in the lookup table. Storing an optimal read voltage per word line group instead of per die reduces the number of read retries.