Patents by Inventor Colin Andrew Stobbs

Colin Andrew Stobbs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7038941
    Abstract: A storage device including a magnetic memory and a control circuit. The control circuit is configured to transfer selected data from the magnetic memory a selected number of times and to regulate the transfer of the selected data from the magnetic memory subsequent to transferring the selected data from the magnetic memory the selected number of times.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: May 2, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Sarah Morris Brandenberger, Susan MF Davis, Jonathan Jedwab, Colin Andrew Stobbs
  • Patent number: 6628543
    Abstract: A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: September 30, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Colin Andrew Stobbs
  • Patent number: 6597597
    Abstract: A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is kept below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: July 22, 2003
    Assignee: Hewlett-Packard Company
    Inventor: Colin Andrew Stobbs
  • Publication number: 20030112658
    Abstract: A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
    Type: Application
    Filed: October 17, 2002
    Publication date: June 19, 2003
    Inventor: Colin Andrew Stobbs
  • Publication number: 20030090931
    Abstract: A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 15, 2003
    Inventor: Colin Andrew Stobbs