Abstract: This invention discloses a semiconductor device with latch-up prevention mechanisms. According to one embodiment, it comprises a first doping region, wherein one or more semiconductor devices are disposed therein and coupling to a first supply voltage, a second doping region adjacent to the first doping region, wherein the second doping region is an Nwell, and at least one PMOS capacitor is disposed therein and coupled to a second supply voltage higher than the first supply voltage, wherein one or more deep N-type implant regions are disposed beneath a bulk pick-up N+ region of the PMOS device in the second doping region, and a P-type region disposed between the first and second doping regions.

Abstract: This invention discloses a semiconductor device with latch-up prevention mechanisms. According to one embodiment, it comprises a first N-type region, wherein one or more P-type metal-oxide-semiconductor (PMOS) devices are disposed therein, a second N-type region adjacent to the first N-type region, wherein one or more PMOS devices are also disposed therein, and a P-type region disposed between the first and second N-type regions, wherein one or more guard ring is disposed therein, so that the semiconductor device is more immune to latch-up.

Abstract: This invention discloses a semiconductor device with latch-up prevention mechanisms. According to one embodiment, it comprises a first N-type region, wherein one or more P-type metal-oxide-semiconductor (PMOS) devices are disposed therein, a second N-type region adjacent to the first N-type region, wherein one or more PMOS devices are also disposed therein, and a P-type region disposed between the first and second N-type regions, wherein one or more guard rings are disposed therein, so that the semiconductor device is more immune to latch-up.