Patents by Inventor Colin Bombardier

Colin Bombardier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10510675
    Abstract: Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.
    Type: Grant
    Filed: February 5, 2018
    Date of Patent: December 17, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Somnath Ghosh, Eswar Ramanathan, Qanit Takmeel, Ming He, Jeric Sarad, Ashwini Chandrashekar, Colin Bombardier, Anbu Selvam KM Mahalingam, Keith P. Donegan, Prakash Periasamy
  • Publication number: 20190244911
    Abstract: Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.
    Type: Application
    Filed: February 5, 2018
    Publication date: August 8, 2019
    Inventors: Somnath Ghosh, Eswar Ramanathan, Qanit Takmeel, Ming He, Jeric Sarad, Ashwini Chandrashekar, Colin Bombardier, Anbu Selvam KM Mahalingam, Keith P. Donegan, Prakash Periasamy
  • Patent number: 10199270
    Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: February 5, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Colin Bombardier, Ming He, Vikrant Chauhan, Anbu Selvam KM Mahalingam, Keith Donegan
  • Publication number: 20180342421
    Abstract: Interconnect structures and methods of fabricating an interconnect structure. First and second non-mandrel interconnects are formed in an interlayer dielectric layer. The first non-mandrel interconnect and the second non-mandrel interconnect have respective side surfaces that extend in a first direction. The connector interconnect extends in a second direction transverse to the first direction from the side surface of the first non-mandrel interconnect to the side surface of the second non-mandrel interconnect.
    Type: Application
    Filed: May 25, 2017
    Publication date: November 29, 2018
    Inventors: Colin Bombardier, Ming He, Vikrant Chauhan, Anbu Selvam KM Mahalingam, Keith Donegan