Patents by Inventor Colin E. C. Wood

Colin E. C. Wood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making non-alloyed heterojunction ohmic contacts
    Patent number: 4398963
    Abstract: Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.
    Type: Grant
    Filed: November 19, 1980
    Date of Patent: August 16, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Richard A. Stall, Colin E. C. Wood, Lester F. Eastman
  • Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources
    Patent number: 4233092
    Abstract: A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a molecular beam consisting of elemental S, Se or Te.
    Type: Grant
    Filed: September 12, 1979
    Date of Patent: November 11, 1980
    Assignee: U.S. Philips Corporation
    Inventors: Jeffrey J. Harris, Colin E. C. Wood
  • Method of manufacturing semiconductor devices utilizing a sure-step molecular beam deposition
    Patent number: 4218271
    Abstract: Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by an M.B.E. process on an exposed surface of the III-V compound stratum. A III-V compound layer doped with the element constituting the film is deposited over the film, when making, for example an F.E.T. An ohmic contact layer is deposited over the film to make an ohmic contact.
    Type: Grant
    Filed: April 12, 1978
    Date of Patent: August 19, 1980
    Assignee: U.S. Philips Corporation
    Inventor: Colin E. C. Wood