Patents by Inventor Colin Humphreys

Colin Humphreys has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein
    Patent number: 9142723
    Abstract: A semiconductor wafer comprising a substrate layer and a first GaN layer having one or more SiNx interlayers therein, wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10 nm.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: September 22, 2015
    Assignee: Intellec Limited
    Inventors: Colin Humphreys, Clifford McAleese, Menno Kappers, Zhenyu Liu, Dandan Zhu
  • SEMICONDUCTOR WAFER COMPRISING GALLIUM NITRIDE LAYER HAVING ONE OR MORE SILICON NITRIDE INTERLAYER THEREIN
    Publication number: 20130270575
    Abstract: A semiconductor wafer comprising a substrate layer and a first GaN layer having one or more SiNx interlayers therein, wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10 nm.
    Type: Application
    Filed: October 12, 2011
    Publication date: October 17, 2013
    Inventors: Colin Humphreys, Clifford McAleese, Menno Kappers, Zhenyu Liu, Dandan Zhu