Abstract: Embodiments of an apparatus for generating electric power from flowing seawater are disclosed. Embodiments form fluid channels having magnetic fields through which seawater will flow. Electrodes are arranged with respect to the fluid channels and connected together such that electric power is generated as seawater flows through the channels.

Abstract: Embodiments of an apparatus for generating electric power from flowing seawater are disclosed. Embodiments form fluid channels having magnetic fields through which seawater will flow. Electrodes are arranged with respect to the fluid channels and connected together such that electric power is generated as seawater flows through the channels.

Abstract: Embodiments of an apparatus for generating electric power from flowing seawater are disclosed. Embodiments form fluid channels having magnetic fields through which seawater will flow. Electrodes are arranged with respect to the fluid channels and connected together such that electric power is generated as seawater flows through the channels.

Abstract: Embodiments of an apparatus for generating electric power from flowing seawater are disclosed. Embodiments form fluid channels having magnetic fields through which seawater will flow. Electrodes are arranged with respect to the fluid channels and connected together such that electric power is generated as seawater flows through the channels.

Abstract: Various embodiments of an apparatus and method for extracting useful work from a fluid stream are disclosed. Some embodiments comprise balanced hydrofoils comprising upper and lower semifoils joined by a member. Some embodiments comprise an array of removable hydrofoil modules wherein each module is adapted to provide an independent power contribution to an overall system, depending on speed of the fluid stream in the vicinity of the module, and each module is further adapted to provide its power contribution at a substantially consistent pressure to an array-wide high pressure fluid circuit. These and other embodiments are further disclosed herein.

Abstract: In example embodiments, techniques are provided for suppressing unwanted clashes between elements of a CAD project. A software application receives a user-defined script for a clash suppression rule that includes at least an abstraction-based query and control flow statements. The application executes the user-defined script for a given clash by mapping the abstraction-based query to a query of a relational database that maintains element data for the CAD project, returning element data from the relational database in response to the query, and evaluating the returned element data using the control flow statements to determine whether the given clash is an unwanted clash. The given clash is suppressed in response to determining the given clash is an unwanted clash.

Abstract: Various embodiments of an apparatus and method for extracting useful work from a fluid stream are disclosed. Some embodiments comprise balanced hydrofoils comprising upper and lower semifoils joined by a member. Some embodiments comprise an array of removable hydrofoil modules wherein each module is adapted to provide an independent power contribution to an overall system, depending on speed of the fluid stream in the vicinity of the module, and each module is further adapted to provide its power contribution at a substantially consistent pressure to an array-wide high pressure fluid circuit. These and other embodiments are further disclosed herein.

Abstract: Electronic elements having an active device region and integrated passive device (IPD) region on a common substrate preferably include a composite dielectric region in the IPD region underlying the IPD to reduce electro-magnetic (E-M) coupling to the substrate. Mechanical stress created by plain dielectric regions and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions in the composite dielectric region of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material in the composite dielectric region. For silicon substrates, non-single crystal silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.

Abstract: Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.

Abstract: Electronic elements having an active device region and integrated passive device (IPD) region on a common substrate preferably include a composite dielectric region in the IPD region underlying the IPD to reduce electro-magnetic (E-M) coupling to the substrate. Mechanical stress created by plain dielectric regions and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions in the composite dielectric region of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material in the composite dielectric region. For silicon substrates, non-single crystal silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.

Abstract: Electronic elements (44, 44?, 44?) having an active device region (46) and integrated passive device (IPD) region (60) on a common substrate (45) preferably include a composite dielectric region (62, 62?, 62?) in the IPD region underlying the IPD (35) to reduce electromagnetic (E-M) (33) coupling to the substrate (45). Mechanical stress created by plain dielectric regions (36?) and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions (65, 65?, 65?) in the composite dielectric region (62, 62?, 62?) of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78?, 78?) in the composite dielectric region (62, 62?, 62?). For silicon substrates (45), non-single crystal silicon is suitable for the inclusions (65, 65?, 65?) and silicon oxide for the dielectric material (78, 78?, 78?).

Abstract: Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.

Abstract: Electronic elements (44, 44?, 44?) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44?, 44?) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36?) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62?, 62?) having electrically isolated inclusions (65, 65?, 65?) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78?, 78?) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65?, 65?) and silicon oxide for the dielectric material (78, 78?, 78?).

Abstract: Electronic elements (44, 44?, 44?) having an active device region (46) and integrated passive device (IPD) region (60) on a common substrate (45) preferably include a composite dielectric region (62, 62?, 62?) in the IPD region underlying the IPD (35) to reduce electromagnetic (E-M) (33) coupling to the substrate (45). Mechanical stress created by plain dielectric regions (36?) and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions (65, 65?, 65?) in the composite dielectric region (62, 62?, 62?) of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78?, 78?) in the composite dielectric region (62, 62?, 62?). For silicon substrates (45), non-single crystal silicon is suitable for the inclusions (65, 65?, 65?) and silicon oxide for the dielectric material (78, 78?, 78?).

Abstract: Electronic elements (44, 44?, 44?) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44?, 44?) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36?) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62?, 62?) having electrically isolated inclusions (65, 65?, 65?) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78?, 78?) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65?, 65?) and silicon oxide for the dielectric material (78, 78?, 78?).

Abstract: An energy management system operable in three modes of operation including a driving mode to drive a vehicle drive shaft (110), a retarding mode to retard the vehicle drive shaft and a neutral mode to have no driving or retarding influence on the vehicle drive shaft. The system comprises an energy accumulator (100, 101) operable to store and release energy through receipt and release of fluid, a pump (104) having a pump drive shaft and being in fluid communication with the energy accumulator, a reservoir (107) of fluid in communication with the pump, and a coupler adapted to couple the pump to the vehicle drive shaft. In the retarding mode, the vehicle drive shaft drives the pump to pump fluid to the energy accumulator. In the driving mode, the energy accumulator releases fluid to drive the pump which drives the vehicle drive shaft. In the neutral mode, the pump is inoperative to exert any driving or retarding influence on the vehicle drive shaft.

Abstract: An energy management system operable in three modes of operation to either drive or retard the drive shaft (110) of a vehicle, or in a neutral mode, to have no driving or retarding influence on the drive shaft. The system includes energy accumulating means (100, 101) which is operable to store and release energy through receipt and release of fluid, pumping means (104) in fluid communication with the energy communication means (100, 101), a reservoir (107) of fluid in communication with the pumping means (104), and coupling means for coupling the pumping means (110) to the drive shaft (110). Whereby in the retarding mode of the system, the drive shaft (110) drives the pumping means (104) to pump fluid to the energy accumulating means (100, 101), and whereby in the driving mode of the system, the energy accumulating means (100, 101) releases fluid to drive the pumping means (104) which drives the drive shaft (110).

Abstract: An energy management system operable in three modes of operation to either drive or retard the drive shaft (110) of a vehicle, or in a neutral mode, to have no driving or retarding influence on the drive shaft. The system includes energy accumulating means (100, 101) which is operable to store and release energy through receipt and release of fluid, pumping means (104) in fluid communication with the energy communication means (100, 101), a reservoir (107) of fluid in communication with the pumping means (104), and coupling means for coupling the pumping means (110) to the drive shaft (110). Whereby in the retarding mode of the system, the drive shaft (110) drives the pumping means (104) to pump fluid to the energy accumulating means (100, 101), and whereby in the driving mode of the system, the energy accumulating means (100, 101) releases fluid to drive the pumping means (104) which drives the drive shaft (110).