Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Abstract: A polymer comprising a first repeating unit derived from a monomer comprising a hydroxy-aryl group; a second repeating unit derived from a monomer comprising a hydroxy-aryl group protected with an acetal or ketal group; a third repeating unit derived from a (meth)acrylate monomer comprising a cycloaliphatic group; and a fourth repeating unit derived from a monomer comprising an acid-sensitive group, wherein the first, the second, the third, and the fourth repeating units are different from each other.

Abstract: A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1): wherein R1 to R5 are as provided herein; R2 and R3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C1-20 alkyl, a monocyclic or polycyclic C3-20 cycloalkyl, a monocyclic or polycyclic C3-20 fluorocycloalkenyl, a monocyclic or polycyclic C3-20 heterocycloalkyl, a monocyclic or polycyclic C6-20 aryl, or a monocyclic or polycyclic C4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.

Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.