Patents by Inventor Colin Richard REMENTER

Colin Richard REMENTER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR ETCHING FEATURES USING A TARGETED DEPOSITION FOR SELECTIVE PASSIVATION
    Publication number: 20250149330
    Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.
    Type: Application
    Filed: January 10, 2025
    Publication date: May 8, 2025
    Inventors: Wenchi LIU, Zhongkui TAN, Juan VALDIVIA, Colin Richard REMENTER, Qing XU, Yoko YAMAGUCHI, Yoshie KIMURA, Hua XIANG, Yasushi ISHIKAWA
  • METHOD FOR ETCHING FEATURES USING A TARGETED DEPOSITION FOR SELECTIVE PASSIVATION
    Publication number: 20220301853
    Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.
    Type: Application
    Filed: July 1, 2020
    Publication date: September 22, 2022
    Inventors: Wenchi LIU, Zhongkui TAN, Juan VALDIVIA, Colin Richard REMENTER, Qing XU, Yoko YAMAGUCHI, Yoshie KIMURA, Hua XIANG, Yasushi ISHIKAWA