Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive interconnect lines above a substrate, individual ones of the conductive interconnect lines having a top and sidewalls. An etch stop layer is on the top and along an entirety of the sidewalls of the individual ones of the conductive interconnect lines.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: A plurality of interconnect features are formed in an interconnect layer on a first insulating layer on a substrate. An opening in the first insulating layer is formed through at least one of the interconnect features. A gap fill layer is deposited in the opening.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: A plurality of interconnect features are formed in an interconnect layer on a first insulating layer on a substrate. An opening in the first insulating layer is formed through at least one of the interconnect features. A gap fill layer is deposited in the opening.

Abstract: Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Abstract: A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.

Abstract: A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.

Abstract: A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.