Abstract: A stowable flood barrier system comprising: first and second barrier modules each comprising a frame and a barrier panel pivotable with respect to the frame between a stowed position and a deployed position, in which deployed position a base of the barrier panel is sealed against the frame and a free edge of the barrier panel extends clear of the frame to present a barrier segment between lateral edges of the barrier panel, wherein the first and second barrier modules are sealable together in the deployed position along the lateral edges of their respective barrier panels to form a linked flood barrier.

Abstract: A water quality and flow monitoring and control apparatus, method and system installed at an end user location and being capable of monitoring one or more of the following water quality parameters: microorganisms (including E. coli), mineral or other ion concentration, pH, temperature, and turbidity. The system also has a water meter that detects the flow of water and has a valve to shut the flow of water off upon detecting a fault condition such as a leak.

Abstract: A stowable flood barrier system comprising: first and second barrier modules each comprising a frame and a barrier panel pivotable with respect to the frame between a stowed position and a deployed position, in which deployed position a base of the barrier panel is sealed against the frame and a free edge of the barrier panel extends clear of the frame to present a barrier segment between lateral edges of the barrier panel, wherein the first and second barrier modules are sealable together in the deployed position along the lateral edges of their respective barrier panels to form a linked flood barrier.

Abstract: A water quality and flow monitoring and control apparatus, method and system installed at an end user location and being capable of monitoring one or more of the following water quality parameters: microorganisms (including E. coli), mineral or other ion concentration, pH, temperature, and turbidity. The system also has a water meter that detects the flow of water and has a valve to shut the flow of water off upon detecting a fault condition such as a leak.

Abstract: The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.

Abstract: A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

Abstract: A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

Abstract: The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.

Abstract: Increased resolution is available from acid-catalyzed photoresist used in fabricating integrated circuits by inhibiting chemically-basic contaminants from contacting the photoresist placed above an IC structure which emits those chemically-basic contaminants. The inhibition can result from physical barrier characteristics of a barrier layer placed between the contaminant-emitting surface and the overlying layer of photoresist, or the layer of barrier material may contain acid moieties which chemically neutralize the emitted chemically-basic contaminants before the contaminants reach the photoresist.

Abstract: A method of providing etched alignment marks on a semiconductor workpiece that has a substantially planar surface, such as one that has been polished, for supporting accurate alignment of the workpiece in subsequent process operations. The surface of the semiconductor workpiece includes two layers of materials that abut at the workpiece surface. For example, the workpiece may include a layer of insulative material such as silicon dioxide forming several vias and a layer of conductive material such as tungsten forming plugs in the vias. The method includes etching the substantially planar surface to reduce a height of one of the materials below the height of the other material. For example, the tungstein plugs can be etched to a height that is below the height of the surrounding silicon dioxide. The location where the silicon dioxide abuts the tungsten produces a small bump. This bump then serves as an alignment mark for subsequent operations.