Patents by Inventor Colita Parker

Colita Parker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTRONIC DEVICES INCLUDING A SEMICONDUCTOR LAYER
    Publication number: 20070272952
    Abstract: An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.
    Type: Application
    Filed: August 10, 2007
    Publication date: November 29, 2007
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Voon-Yew Thean, Brian Goolsby, Linda McCormick, Bich-Yen Nguyen, Colita Parker, Mariam Sadaka, Victor Vartanian, Ted White, Melissa Zavala
  • Electronic devices including a semiconductor layer and a process for forming the same
    Publication number: 20070108481
    Abstract: An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.
    Type: Application
    Filed: November 14, 2005
    Publication date: May 17, 2007
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Voon-Yew Thean, Brian Goolsby, Linda McCormick, Bich-Yen Nguyen, Colita Parker, Mariam Sadaka, Victor Vartanian, Ted White, Melissa Zavala