Abstract: Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

Abstract: A method of increasing the deposition rate of an atomic layer deposition (ALD) process by co-flowing a volatile base with metal organic, a metal halide, or metal hybride precursor. The base does not react with the precursor with which it is flowed such that the base generates no measurable film on the substrate or particles in the processing chamber during the flow time. The addition of the base catalyst increases the rate of adsorption of the precursor with which it is flowed.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.