Patents by Inventor Collin K. L. Mui

Collin K. L. Mui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flowable oxide deposition using rapid delivery of process gases
    Patent number: 9064684
    Abstract: Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: June 23, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Collin K. L. Mui, Lakshminarayana Nittala, Nerissa Draeger
  • Flowable oxide deposition using rapid delivery of process gases
    Patent number: 8278224
    Abstract: Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: October 2, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Collin K. L. Mui, Lakshminarayana Nittala, Nerissa S. Draeger