Abstract: The multiaxial inertial sensor of movements is a micro/nano sensor that makes it possible to couple at least one accelerometer with other structures, either accelerometers or gyroscopes, by an oscillating disk structure. The oscillating disk also forms an inertial sensor such as a gyrometer. This single-chip structure associating both gyroscopes and accelerometers makes it possible to achieve detections and measurements in up to 6 axes, in other words 3 accelerometer axes and 3 gyroscope axes, and to exert control by a single and unique electronic unit, thus permitting a single automatic control loop in excitation and a single electronic reading chip. Application to technologies known as MEMS.

Abstract: An electrical stimulation system including: a mechanism generating at least one electrical signal to be applied to a biological tissue that is to stimulated and measuring a response of the biological tissue to each electrical signal; a calculation mechanism estimating, based on each electrical signal and on a corresponding response of the biological tissue, at least one parameter of an electrical model of the biological tissue and its interface with the electrical stimulation system and determining, using the model, at least one parameter of a stimulation pulse to be applied to the biological tissue by the electrical stimulation system; and a mechanism generating a stimulation pulse to be applied to the biological tissue.

Abstract: The present invention relates to a method for chemically treating the surface condition of a silicon substrate for the roughness contrast characterized in that it comprises at least two successive treatment cycles, with each treatment cycle comprising a first step including placing in contact the silicon substrate with a first solution containing water diluted hydrofluoric (HF) acid and then a second step carried out at a temperature of less than 40° C., comprising placing in contact the silicon layer with a second solution containing water (H2O) diluted ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2), in order to obtain a roughness of less than 0.100 nanometer on a 1 ?m×1 ?m area upon completion of the treatment cycles. The invention will be applied in the field of microelectronics for the production of transistors, of surfaces for photovoltaic panels or for direct molecular bonding.

Abstract: The present invention relates to a method for manufacturing a film of Cu2ZnSnS4 (CZTS) on a metal or metal oxide substrate by successive ion layer adsorption and reaction (SILAR), characterized by the fact that it comprises at least two cycles, each cycle comprising the following successive steps: immersion of the substrate in a cationic solution comprising copper sulfate (CuSO4), tin sulfate (SnSO4) and zinc sulfate (ZnSO4), referred to as the precursors; rinsing by immersion of the substrate in deionized water; immersion of the substrate in an anionic solution comprising sodium sulfide (Na2S); rinsing by immersion of the substrate in deionized water; the concentration ratio of the copper (Cu2+), zinc (Zn2+) and tin (Sn2+) cations and of the sulfur (S2?) anion is 1:1:1:1 or 1:0.5:0.5:1. The invention will be applicable more particularly in the photovoltaic field, especially for production of thin-film, especially nanostructured photovoltaic cells, such as the ETA (Extremely Thin Absorber) cell.

Abstract: Digital loudspeaker comprising a support, a plurality of first membranes suspended on the support, said first membranes being bistable, and said loudspeaker comprising actuator for each of the first membranes that can change each of the first membranes from a first stable state to a second stable state and vice versa, and a controller for controlling said first actuator.

Abstract: A microelectronic wireless transmission device including: a substrate able to be traversed by radio waves intended to be emitted by the device, an antenna, an electrical power supply, an integrated circuit, electrically connected to the antenna and to the electrical power supply, and able to transmit to the antenna electrical signals intended to be emitted by the antenna in the form of the said radio waves, a cap rigidly connected to the substrate and forming, with the substrate, at least one cavity in which the antenna and the integrated circuit are positioned, where the cap comprises an electrically conductive material connected electrically to an electrical potential of the electrical power supply and/or of the integrated circuit, and able to form a reflector with regard to the radio waves intended to be emitted by the antenna.

Abstract: A method for estimating molecular parameters in a sample comprising the following steps: passing the sample through a processing chain including a chromatography step; thereby obtaining a representative signal of molecular parameters as a function of at least one variable of the processing chain; and estimating the molecular parameters using a signal processing device by inverting a direct analytical model of said signal defined as a function of the molecular parameters and technical parameters of the processing chain. Moreover, the processing chain includes a step for multiple measurements of the same product from the chromatography step, the direct analytical model of said signal comprises modelling of this multiple measurement step, and this modelling requires at least one common characteristic of the signals obtained from these multiple measurements.

Abstract: A method for measuring the changes of the electrical performance of an FDSOI transistor between a first and a second state of the transistor after an operating period t1, including the following steps: measurement of the transistor's capacities C1 and C2 respectively in the first and second states, according to a voltage VFG applied between the gate and the source and drain areas, determination, in relation to characteristic C1(VFG) varying between a maximum value Cmax and a minimum value Cmin, with three inflection points, of an ordinate value Cplat of C1(VFG) at the second inflection point of C1(VFG), and of two abscissa values VUpper(0) and VLower(0) of C1(VFG) according to equations VUpper(0)=C1?1((Cmax+Cplat)/2) and VLower(0)=C1?1((Cmin+Cplat)/2), determination, from characteristic C2(VFG), of two abscissa values VUpper(t1) and VLower(t1) of C2(VFG) according to equations VUpper(t1)=C2?1((Cmax+Cplat)/2) and VLower(t1)=C2?1((Cmin+Cplat)/2), determination of variations of defect densities ?Dit1, ?Dit2 b

Abstract: Microelectronic substrate comprising at least: a support layer, a top layer comprising at least one semiconductor, a layer comprising at least one organic material able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and disposed between the support layer and the top layer, and also comprising one or more portions of dielectric material the hardness of which is greater than that of the organic material, disposed in the layer of organic material, and the thickness of which is substantially equal to that of the layer of organic material.

Abstract: Device for the measurement of at least one physical variable, comprising at least: a first and a second resonant sensor, one of the two resonant sensors being sensitive to a variation of the physical variable to be measured and the other of the two resonant sensors not being sensitive to a variation of the physical variable to be measured; means capable of imposing the same resonant frequency on the first and the second resonant sensors; means of measuring a phase shift between the output signals from the first and the second resonant sensors.

Abstract: A method of making a non-volatile double-gate memory cell. The gate of the control transistor is formed with a relief of a semiconductor material on a substrate. The control gate of the memory transistor is formed with a sidewall of the relief of a semiconductor material configured to store electrical charge. A first layer is deposited so as to cover the stack of layers. The first layer is etched so as to form a first pattern juxtaposed on the relief. A second layer is formed on the first pattern. The second layer is etched so as to form on the first pattern a second pattern having a substantially plane upper face.

Abstract: A method of making a non-volatile double-gate memory cell. A gate of the control transistor is formed with a relief on a substrate. A control gate of the memory transistor is formed with a layer of a semiconductor material covering relief. The method includes chemical mechanical polishing (CMP) so as to strip, above the relief another layer and part of the layer of a semiconductor material; stripping of the remaining other layer on both sides of the relief, etching of the layer of a semiconductor material so as to strip this material above the relief and to leave only a pattern on at least one sidewall of the relief.

Abstract: A device for separating and concentrating particles present in a fluid, including: a first microchannel, having at least one first aperture; and at least one second microchannel, having at least one second aperture, and an end is disclosed. The first microchannel surrounds part or all of the second microchannel at the end. The first microchannel and the second microchannel are connected, at the end, by at least one nanochannel, the nanochannel(s) forming a restriction between the first microchannel and the second microchannel. A cap bounds the first microchannel, the second microchannel and the nanochannel at the end. The first microchannel and the second microchannel are made in a first substrate. The first aperture and the second aperture open into a same face of this substrate. The device may be used for separating and concentrating particles of biological samples, such as viruses, DNA or synthesic molecules.

Abstract: A TSV via structure comprising an upper part made on the side of the front face of a substrate in which electronic components are located and a lower part with height and cross-section smaller than the height and cross-section the upper part, the arrangement of the connection element in the substrate being such that it releases stresses generated by the different materials of said structure.

Abstract: A transistor includes an active layer forming a channel for the transistor, an insulating layer disposed facing a lower face of the active layer, a gate turned toward an upper face of the active layer and a source and a drain disposed on both sides of the gate. At least one among the source and the drain extends at least partly through the active layer and into the insulating layer.