Patents by Inventor Cong Do

Cong Do has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same
    Patent number: 6844612
    Abstract: A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.
    Type: Grant
    Filed: April 29, 2003
    Date of Patent: January 18, 2005
    Assignee: Novellus Systems, Inc.
    Inventors: Jason Tian, Wenxian Zhu, M. Ziaul Karim, Cong Do