Patents by Inventor Cong-Min FANG
Cong-Min FANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11152462Abstract: A semiconductor device includes a semiconductive substrate, a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate, an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin, a first semiconductive raised portion and a second semiconductive raised portion. The first semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive fin and the second semiconductive fin. A top surface of the first semiconductive fin is higher than a top surface of the first semiconductive raised portion. The second semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive raised portion and the second semiconductive fin.Type: GrantFiled: July 29, 2019Date of Patent: October 19, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min Fang, Kang-Min Kuo, Shi-Min Wu
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Patent number: 11063039Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.Type: GrantFiled: July 30, 2018Date of Patent: July 13, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cong-Min Fang, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20190355814Abstract: A semiconductor device includes a semiconductive substrate, a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate, an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin, a first semiconductive raised portion and a second semiconductive raised portion. The first semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive fin and the second semiconductive fin. A top surface of the first semiconductive fin is higher than a top surface of the first semiconductive raised portion. The second semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive raised portion and the second semiconductive fin.Type: ApplicationFiled: July 29, 2019Publication date: November 21, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min FANG, Kang-Min KUO, Shi-Min WU
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Patent number: 10367059Abstract: A method of manufacturing a semiconductor structure includes the following steps. A first raised portion is formed on a semiconductor substrate. The height of the first raised portion is reduced, and a dielectric material is formed over the first raised portion. The dielectric material is annealed such that the first raised portion is tilted.Type: GrantFiled: September 9, 2017Date of Patent: July 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min Fang, Kang-Min Kuo, Shi-Min Wu
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Publication number: 20180337174Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.Type: ApplicationFiled: July 30, 2018Publication date: November 22, 2018Inventors: Cong-Min FANG, Chih-Lin WANG, Kang-Min KUO
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Patent number: 10096596Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.Type: GrantFiled: December 15, 2015Date of Patent: October 9, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cong-Min Fang, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20170373143Abstract: A method of manufacturing a semiconductor structure includes the following steps. A first raised portion is formed on a semiconductor substrate. The height of the first raised portion is reduced, and a dielectric material is formed over the first raised portion. The dielectric material is annealed such that the first raised portion is tilted.Type: ApplicationFiled: September 9, 2017Publication date: December 28, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min FANG, Kang-Min KUO, Shi-Min WU
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Patent number: 9761658Abstract: A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a first dielectric. The first active area is in the semiconductor substrate. The second active area is in the semiconductor substrate. The first trench is in the semiconductor substrate and separates the first active area and the second active area from each other. The raised portion is raised from the semiconductor substrate and is disposed in the first trench. The first dielectric is in the first trench and covers the raised portion.Type: GrantFiled: May 21, 2015Date of Patent: September 12, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min Fang, Kang-Min Kuo, Shi-Min Wu
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Publication number: 20170170170Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.Type: ApplicationFiled: December 15, 2015Publication date: June 15, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cong-Min FANG, Chih-Lin WANG, Kang-Min KUO
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Publication number: 20160190240Abstract: A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a first dielectric. The first active area is in the semiconductor substrate. The second active area is in the semiconductor substrate. The first trench is in the semiconductor substrate and separates the first active area and the second active area from each other. The raised portion is raised from the semiconductor substrate and is disposed in the first trench. The first dielectric is in the first trench and covers the raised portion.Type: ApplicationFiled: May 21, 2015Publication date: June 30, 2016Inventors: Cong-Min FANG, Kang-Min KUO, Shi-Min WU