Patents by Inventor Cong Ruan

Cong Ruan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12098119
    Abstract: Disclosed by the present invention are an SIRT6 small-molecule allosteric activator and the application thereof and provided is an SIRT6 small-molecule allosteric activator that contains a derivative as shown in formula (1) or a pharmacologically acceptable salt thereof as the active ingredient. The SIRT6 small-molecule allosteric activator designed and synthesized in the present invention has high efficacy and low toxicity, may significantly activate SIRT6 activity during in vitro experiments, and has great importance in the development of pharmaceuticals for relevant diseases.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: September 24, 2024
    Assignee: Nutshell BioTech (Shanghai) Co., Ltd.
    Inventors: Jian Zhang, Yinyi Chen, Cong Ruan, Xiuyan Yang, Chengxiang Wang, Qiufen Zhang, Jialin Shang, Xinyuan Xu
  • Publication number: 20220220069
    Abstract: Disclosed by the present invention are an SIRT6 small-molecule allosteric activator and the application thereof and provided is an SIRT6 small-molecule allosteric activator that contains a derivative as shown in formula (1) or a pharmacologically acceptable salt thereof as the active ingredient. The SIRT6 small-molecule allosteric activator designed and synthesized in the present invention has high efficacy and low toxicity, may significantly activate SIRT6 activity during in vitro experiments, and has great importance in the development of pharmaceuticals for relevant diseases.
    Type: Application
    Filed: May 14, 2018
    Publication date: July 14, 2022
    Applicant: SHANGHAI JIAOTONG UNIVERSITY SCHOOL OF MEDICINE
    Inventors: Jian ZHANG, Yinyi CHEN, Cong RUAN, Xiuyan YANG, Chengxiang WANG, Qiufen ZHANG, Jialin SHANG, Xinyuan XU
  • Publication number: 20150227650
    Abstract: The present disclosure relates to a method for modeling an etching yield in the evolution simulation of a plasma etched surface, and belongs to the technical field of process simulation of etching surfaces in a micro-electronic processing technology. The method includes the following steps: performing parameterization representation on an etching yield model of various ions; obtaining optimal parameters in the etching yield model by adopting an optimization algorithm; in an optimization process, selecting some specific positions on the surface of a groove, and by comparing simulated etching rates at different time points in an evolution process with an actual etching rate, calculating the goodness (fitness value) of each group of model parameters as a basis of selecting the optimization algorithm and generating a next model parameter set; substituting the obtained model parameters into a model parameterization formula so as to obtain the etching yield model.
    Type: Application
    Filed: July 18, 2014
    Publication date: August 13, 2015
    Inventors: Yixu Song, Cong Ruan, Yangfu Gao, Xiaomin Sun