Patents by Inventor Cong Trinh

Cong Trinh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210265157
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Patent number: 11017997
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20200203638
    Abstract: Disclosed herein are organic photosensitive optoelectronic devices comprising acceptor and/or donor sensitizers to increase absorption and photoresponse of the photoactive layers of the devices. In particular, devices herein include at least one acceptor layer and at least one donor layer, wherein the acceptor layer may comprise a mixture of an acceptor material and at least one sensitizer, and the donor layer may comprise a mixture of a donor material and at least one sensitizer. Methods of fabricating the organic photosensitive optoelectronic devices are also disclosed.
    Type: Application
    Filed: July 30, 2019
    Publication date: June 25, 2020
    Inventors: Mark E. Thompson, Cong Trinh, Peter I. Djurovich, Sarah M. Conron
  • Publication number: 20190348271
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: January 11, 2018
    Publication date: November 14, 2019
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20190309412
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Cong Trinh, Mihaela Balseanu, Lakmal C. Kalutarage
  • Publication number: 20190259971
    Abstract: Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Application
    Filed: August 31, 2018
    Publication date: August 22, 2019
    Inventors: Stephen R. Forrest, Xin Xiao, Jeramy D. Zimmerman, Kevin Bergemann, Anurag Panda, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Patent number: 10367157
    Abstract: Disclosed herein are organic photosensitive optoelectronic devices comprising acceptor and/or donor sensitizers to increase absorption and photoresponse of the photoactive layers of the devices. In particular, devices herein include at least one acceptor layer and at least one donor layer, wherein the acceptor layer may comprise a mixture of an acceptor material and at least one sensitizer, and the donor layer may comprise a mixture of a donor material and at least one sensitizer. Methods of fabricating the organic photosensitive optoelectronic devices are also disclosed.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: July 30, 2019
    Assignee: University of Southern California
    Inventors: Mark E. Thompson, Cong Trinh, Peter I. Djurovich, Sarah M. Conron
  • Patent number: 10276817
    Abstract: Disclosed herein are stable organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material having a sufficiently high glass transition temperature, e.g., higher than the temperature or temperature range at which the device typically operates, higher than a highest operating temperature of the device, higher than a threshold temperature value, etc. and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: April 30, 2019
    Assignees: University of Southern California, The Regents of the University of Michigan
    Inventors: Stephen R. Forrest, Quinn Burlingame, Xin Xiao, Kevin Bergemann, Anurag Panda, Jeramy D. Zimmerman, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Patent number: 10170298
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 10069095
    Abstract: Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: September 4, 2018
    Assignees: University of Southern California, The Regents of the University of Michigan
    Inventors: Stephen R. Forrest, Xin Xiao, Jeramy D. Zimmerman, Kevin Bergemann, Anurag Panda, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Publication number: 20180076023
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Publication number: 20160099143
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 9297073
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 29, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Wenbo Yan, Victor Nguyen, Cong Trinh, Mihaela Balseanu, Li-Qun Xia
  • Publication number: 20160056398
    Abstract: Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Application
    Filed: April 14, 2014
    Publication date: February 25, 2016
    Inventors: Stephen R. Forrest, Xin Xiao, Jeramy D. Zimmerman, Kevin Bergemann, Anurag Panda, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Publication number: 20160020418
    Abstract: Disclosed herein are stable organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material having a sufficiently high glass transition temperature, e.g., higher than the temperature or temperature range at which the device typically operates, higher than a highest operating temperature of the device, higher than a threshold temperature value, etc. and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).
    Type: Application
    Filed: July 20, 2015
    Publication date: January 21, 2016
    Inventors: Stephen R. Forrest, Quinn Burlingame, Xin Xiao, Kevie Bergemann, Anurag Panda, Jeramy D. Zimmerman, Brian E. Lassiter, Mark E. Thompson, Andrew N. Bartynski, Cong Trinh
  • Publication number: 20150299856
    Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.
    Type: Application
    Filed: February 19, 2015
    Publication date: October 22, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ning LI, Wenbo YAN, Victor NGUYEN, Cong TRINH, Mihaela BALSEANU, Li-Qun XIA
  • Publication number: 20150303377
    Abstract: The present disclosure generally relates to chromophoric compounds that combine strong absorption of light at visible wavelengths with the ability to undergo symmetry-breaking intramolecular charge transfer (ICT), and their use for the generation of free carriers in organic photovoltaic cells (OPVs) and electric-field-stabilized geminate polaron pairs. The present disclosure also relates to the synthesis of such compounds, methods of manufacture, and applications in photovoltaic systems and organic lasers.
    Type: Application
    Filed: August 2, 2012
    Publication date: October 22, 2015
    Inventors: Mark E. Thompson, Matthew T. Whited, Niral M. Patel, Peter I. Djurovich, Stephen R. Forrest, Kathryn R. Allen, Cong Trinh