Abstract: Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

Abstract: Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature.

Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system provided by the present invention has the resolution better than 1 ?m, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.

Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature.

Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system has the resolution better than 1 ?m, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.