Patents by Inventor Congyan LU

Congyan LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PRESSURE SENSOR BASED ON ZINC OXIDE NANOWIRES AND METHOD OF MANUFACTURING PRESSURE SENSOR
    Publication number: 20230371384
    Abstract: A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.
    Type: Application
    Filed: October 26, 2020
    Publication date: November 16, 2023
    Inventors: Ling Li, Xuewen Shi, Nianduan Lu, Congyan Lu, Di Geng, Xinlv Duan, Ming Liu
  • Method for obtaining a contact resistance of a planar device
    Patent number: 11215652
    Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.
    Type: Grant
    Filed: December 25, 2015
    Date of Patent: January 4, 2022
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Guangwei Xu, Zhiheng Han, Wei Wang, Congyan Lu, Lingfei Wang, Ling Li, Ming Liu
  • METHOD FOR OBTAINING A CONTACT RESISTANCE OF A PLANAR DEVICE
    Publication number: 20210165027
    Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.
    Type: Application
    Filed: December 25, 2015
    Publication date: June 3, 2021
    Inventors: Guangwei XU, Zhiheng HAN, Wei WANG, Congyan LU, Lingfei WANG, Ling LI, Ming LIU