Abstract: A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.

Abstract: A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.

Abstract: A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.