Patents by Inventor Connie H. Li

Connie H. Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid phase epitaxy of 3C—SiC on Si(001)
    Patent number: 9673047
    Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: June 6, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
  • Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
    Patent number: 9614063
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: April 4, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker
  • Method for an Optical Modulator Using the Spin Hall Effect in Metals
    Publication number: 20160320641
    Abstract: The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.
    Type: Application
    Filed: April 27, 2016
    Publication date: November 3, 2016
    Inventors: Olaf M. J. van 't Erve, Connie H. Li, Berend T. Jonker, Aubrey T. Hanbicki, Kathleen M. McCreary
  • Direct Electrical Detection of Current-Induced Spin Polarization Due to Spin-Momentum Locking in Topological Insulators
    Publication number: 20160169986
    Abstract: A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi2Se3 and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Application
    Filed: November 6, 2015
    Publication date: June 16, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. T. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Solid phase epitaxy of 3C-SiC on Si(001)
    Publication number: 20160118465
    Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 28, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
  • Homoepitaxial Tunnel Barriers with Functionalized Graphene-on-Graphene and Methods of Making
    Publication number: 20150303059
    Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
    Type: Application
    Filed: February 24, 2015
    Publication date: October 22, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. T. van 't Erve, Connie H. Li, Jeremy T. Robinson, Berend T. Jonker