Abstract: Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate, capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer, capable of conducting ions, formed on the first surface. The first ceramic-containing layer has a thickness in a range from about 1,000 nanometers to about 5,000 nanometers. The separator further comprises a second ceramic-containing layer, capable of conducting ions, formed on the second surface. The second ceramic-containing layer is a binder-free ceramic-containing layer and has a thickness in a range from about 1 nanometer to about 1,000 nanometers.

Abstract: Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate, capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer, capable of conducting ions, formed on the first surface. The first ceramic-containing layer has a thickness in a range from about 1,000 nanometers to about 5,000 nanometers. The separator further comprises a second ceramic-containing layer, capable of conducting ions, formed on the second surface. The second ceramic-containing layer is a binder-free ceramic-containing layer and has a thickness in a range from about 1 nanometer to about 1,000 nanometers.

Abstract: Separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate (131), capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer (136), capable of conducting ions, formed on the first surface. The first ceramic-containing layer (136) has a thickness in arrange from about 1,000 nanometers to about 5000 nanometers. The separator further comprises a second ceramic-containing layer (138), capable of conducting ions, formed on the second surface. The second ceramic-containing layer (138) is a binder-free ceramic-containing layer and has a thickness in arrange from about 1 nanometer to about 1,000 nanometers.

Abstract: Separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate (131), capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer (136), capable of conducting ions, formed on the first surface. The first ceramic-containing layer (136) has a thickness in arrange from about 1,000 nanometers to about 5000 nanometers. The separator further comprises a second ceramic-containing layer (138), capable of conducting ions, formed on the second surface. The second ceramic-containing layer (138) is a binder-free ceramic-containing layer and has a thickness in arrange from about 1 nanometer to about 1,000 nanometers.

Abstract: An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

Abstract: An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

Abstract: In one embodiment, a method to form a superconductor device includes depositing a crystalline layer having a preferred crystallographic orientation on a substrate and forming an oriented superconductor layer comprising an oriented superconductor material on the crystalline layer. A metallic layer is formed on the superconductor layer and a mask is provided proximate the substrate to define a protected portion of the oriented superconductor layer and an exposed portion of the oriented superconductor layer. The exposed portion of the oriented superconductor layer is removed without etching the protected portion of the oriented superconductor layer.

Abstract: A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

Abstract: An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

Abstract: In one embodiment a superconductor tape includes a substrate comprising a plurality of layers, an oriented superconductor layer disposed on the substrate, and an alloy coating disposed upon the superconductor layer, the alloy coating comprising one or more metallic layers in which at least one metallic layer comprises a metal alloy.

Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.

Abstract: Embodiments of the present invention relate generally to lithium-ion batteries, and more specifically, to batteries having integrated separators and methods of fabricating such batteries. In one embodiment, a lithium-ion battery having an electrode structure is provided. The lithium-ion battery comprises an anode stack, a cathode stack, and a porous electrospun polymer separator comprising a nano-fiber backbone structure. The anode stack comprises an anodic current collector and an anode structure formed over a first surface of the anodic current collector. The cathode stack comprises a cathodic current collector and a cathode structure formed over a first surface of the cathodic current collector. The porous electrospun polymer separator is positioned between the anode structure and the cathode structure.

Abstract: A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

Abstract: A superconductor tape includes a plurality of conductive strips having respective long directions parallel to a long tape direction of the superconductor tape, where each of the plurality of conductive strips separated from one another by a inter-strip region. The superconductor tape further includes a superconductor layer disposed adjacent the plurality of conductive strips, having a length along the long tape direction, where the superconductor layer comprises a plurality of superconductor strips disposed under the respective plurality of conductive strips, and a non-superconductor strip disposed adjacent the inter-strip region.

Abstract: High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided.

Abstract: High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided.

Abstract: A method and apparatus for forming battery active material on a substrate are disclosed. In one embodiment, an apparatus for depositing a battery active material on a surface of a substrate includes a substrate conveyor system for transporting the substrate within the apparatus, a material spray assembly disposed above the substrate conveyor system, and a first heating element disposed adjacent to the material spray assembly above the substrate conveyor system configured to heat the substrate. The material spray assembly has a 2-D array of nozzles configured to electrospray an electrode forming solution on the surface of the substrate.

Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.

Abstract: A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.

Abstract: High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided.