Patents by Inventor Conrad J. Koeneke

Conrad J. Koeneke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky-barrier MOS devices
    Patent number: 4665414
    Abstract: Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).
    Type: Grant
    Filed: January 21, 1986
    Date of Patent: May 12, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Conrad J. Koeneke, Martin P. Lepselter, William T. Lynch
  • Fabrication of schottky-barrier MOS FETs
    Patent number: 4485550
    Abstract: Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).
    Type: Grant
    Filed: July 23, 1982
    Date of Patent: December 4, 1984
    Assignee: AT&T Bell Laboratories
    Inventors: Conrad J. Koeneke, Martin P. Lepselter, William T. Lynch