Patents by Inventor CONSTANINE FRAGOS

CONSTANINE FRAGOS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of deposition
    Patent number: 10601388
    Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: March 24, 2020
    Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Scott Haymore, Constanine Fragos
  • METHOD OF DEPOSITION
    Publication number: 20170104465
    Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.
    Type: Application
    Filed: October 5, 2016
    Publication date: April 13, 2017
    Inventors: STEPHEN R. BURGESS, RHONDA HYNDMAN, AMIT RASTOGI, SCOTT HAYMORE, CONSTANINE FRAGOS